Abstract:Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is, therefore, crucial for understanding the growth and operation of materials, especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the analysis of point defects in crystalline materials as well as a generalized workflow for their treatment with high-throughput simulations. The distinguishing feature of our approach is an emphasis on a unique, unit cell, structure-only, definition of point defects which decouples the defect definition, and the specific supercell representation used to simulate the defect. This allows the results of first-principles calculations to be aggregated into a database without extensive provenance information and is a crucial step in building a persistent database of point defects that can grow over time, a key component toward realizing the idea of a “defect genome” that can yield more complex relationships governing the behavior of defects in materials. We demonstrate several examples of the approach for three technologically relevant materials and highlight current pitfalls that must be considered when employing these methodologies as well as their potential solutions.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to solve the problem of analyzing the physical characteristics of point defects (including dopants) in semiconductors and insulators. Specifically, the paper proposes a general - purpose Python framework for analyzing point defects in crystalline materials and develops a high - throughput simulation workflow. The main goals of these tools and methods are: 1. **Improve the automation level of defect analysis**: Reduce manual operations through automated tools, enabling researchers to conduct defect analysis more efficiently. 2. **Construct a persistent defect database**: Through structure - independent defect definitions, different calculation results can be aggregated into one database without the need for detailed source information. This helps gradually build a persistent database containing a large amount of defect data. 3. **Promote the realization of the "defect genome" concept**: By constructing and maintaining a persistent defect database, reveal the complex relationships of defect behaviors, thereby accelerating materials engineering and discovery. ### Background and methods of the paper #### Background Point defects have an important impact on the physical properties of materials, especially in semiconductors and insulators, where they usually dominate the electrical and optical behaviors of materials. Since defects are usually formed during the material growth process and their properties are difficult to isolate and experimentally study, first - principles calculations (such as density functional theory DFT) are widely used to analyze these properties. #### Methods 1. **Calculation of defect formation energy**: The defect formation energy \( E_f[X^q] \) is a measure of the energy cost required to create a defect with a charged state \( q \) under given chemical conditions. The calculation formula is as follows: \[ E_f[X^q]=\frac{E_{\text{tot}}[X^q]}{C_0}-E_{\text{tot}}[\text{bulk}]+\sum_{i} n_{i} \mu_{i}+q E_{F}+\Delta q \] where: - \( E_{\text{tot}}[X^q] \) is the total energy of the defect supercell. - \( E_{\text{tot}}[\text{bulk}] \) is the total energy of the bulk - phase supercell of the same size. - \( n_{i} \) is the change in the number of the \( i \) - th type of atom required to form the defect. - \( \mu_{i} \) is the chemical potential of the \( i \) - th type of atom. - \( E_{F} \) is the chemical potential of electrons (i.e., the Fermi level). - \( \Delta q \) is a finite - size correction term used to consider the effect of simulating charged defects in a finite - period cell. 2. **Correction of chemical potential**: The chemical potential \( \mu_{i} \) can be calculated by combining DFT calculations of pure element phases and experimentally corrected formation enthalpies. For a set of atomic species (indexed by \( i \)) and a set of competing compounds (indexed by \( \alpha \)), these correction terms must satisfy the following constraint conditions: \[ \sum_{\alpha} n_{\alpha i} \Delta \mu_{i} \leq \Delta H_{f}(\alpha) \quad \forall \alpha \] \[ \sum_{\alpha} n_{\text{bulk} i} \Delta \mu_{i}=\Delta H_{f}(\text{bulk}) \] where \( n_{\alpha i} \) is the number of the \( i \) - th type of atom in one chemical formula unit of compound \( \alpha \), and \( \Delta H_{f}(\alpha) \) is the formation enthalpy of one chemical formula unit of compound \( \alpha \). 3. **Identification of defect positions**: In order to automatically determine the position of a defect after structural relaxation, the paper proposes a method based on SOAP vectors. By calculating the SOAP vector of each site and comparing it with the SOAP vector of the perfect bulk - phase structure, the degree of distortion of the site can be determined. Defect sites...

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