Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

Understanding the strong apparent injection dependence of carrier lifetimes in doped polycrystalline silicon passivated wafers

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Effects of annealing on carrier lifetime in 4H-SiC

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Continuous Distribution of Interface States in N-Type Double-Side Poly-Si/siox Passivating Contact Solar Cells

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Current status and challenges for hole-selective poly-silicon based passivating contacts

Firing stability of phosphorus-doped polysilicon passivating contacts: Factors affecting the degradation behavior

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide

Bulk Lifetime and Doping in Crystalline Silicon via Two-Photon Absorption Time-Resolved Photoluminescence Decay

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers