Abstract:Statistical electrical measurements of 2D memristors show the extraordinary improvement of yield and endurance by optimizing the metal deposition and MoS2 condition. The intriguing convergence of switching voltages and resistance ratio is revealed. An "effective switching layer" model compatible with both monolayer and few‐layer MoS2, is proposed to understand the reliability improvement and the convergence of switching metrics. 2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS2 films on the reliability and other device metrics of MoS2‐based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An "effective switching layer" model compatible with both monolayer and few‐layer MoS2, is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. The Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

The degradation mechanism and stability enhancement of GaSe lateral memristors

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Physical Mechanisms and Enhancement of Endurance Degradation of SiOx:Ag-based Volatile Memristors

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

High-Stability Memristive Devices Based on Pd Conductive Filaments and Its Applications in Neuromorphic Computing

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing

Observation of the Failure Mechanism in Ag10Ge15Te75-based Memristor Induced by Ion Transport

Controllable high-performance memristors based on 2D Fe 2 GeTe 3 oxide for biological synapse imitation

Stacking the MoS2/GeSe2 Vertical Van Der Waals Heterostructure for Memory Device

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Gradual Ge<inf>1&#x2212;x</inf>Si<inf>x</inf>/Si Heteronanocrystals Based Non-Volatile Floating Gate Memory Device with Asymmetric Tunnel Barriers

Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene.

Sub-5 Nm Monolayer Germanium Selenide (gese) MOSFETs: Towards a High Performance and Stable Device.

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Electrochemically Triggered Degradation Of Silicon Membranes For Smart On-Demand Transient Electronic Devices