Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

High-speed memory from carbon nanotube field-effect transistors with high-kappa gate dielectric

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nonvolatile Memory from Single-Walled Carbon Nanotube-Based Field Effect Transistors

Ferroelectric-carbon Nanotube Memory Devices.

High-Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS2/SWCNTs Network Van Der Waals Heterostructure

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

High-performance N-Type Carbon Nanotube Field-Effect Transistors with Estimated Sub-10-ps Gate Delay

Bi-layer Resistive Switching Memory Using Aligned SWCNTs As Electrodes

Carbon Nanotube Transistor with Short-Term Memory

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

Performance Enhancement and Mechanism Exploration of All-Carbon-nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

A Flexible Carbon Nanotube Sen‐Memory Device

Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Carbon nanotube-based flexible high-speed circuits with sub-nanosecond stage delays

High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory