Abstract:Identification and design of defects in two-dimensional (2D) materials as promising single photon emitters (SPE) requires a deep understanding of underlying carrier recombination mechanisms. Yet, the dominant mechanism of carrier recombination at defects in 2D materials has not been well understood, and some outstanding questions remain: How do recombination processes at defects differ between 2D and 3D systems? What factors determine defects in 2D materials as excellent SPE at room temperature? In order to address these questions, we developed first-principles methods to accurately calculate the radiative and non-radiative recombination rates at defects in 2D materials, using h-BN as a prototypical example. We reveal the carrier recombination mechanism at defects in 2D materials being mostly dominated by defect-defect state recombination in contrast to defect-bulk state recombination in most 3D semiconductors. In particular, we disentangle the non-radiative recombination mechanism into key physical quantities: zero-phonon line (ZPL) and Huang-Rhys factor. At the end, we identified strain can effectively tune the electron-phonon coupling at defect centers and drastically change non-radiative recombination rates. Our theoretical development serves as a general platform for understanding carrier recombination at defects in 2D materials, while providing pathways for engineering of quantum efficiency of SPE.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to solve the problem of carrier recombination mechanisms at defects in two - dimensional (2D) materials. Specifically, the research mainly focuses on the following aspects: 1. **Understanding carrier recombination mechanisms in 2D materials**: - In 2D materials, defects have broad application prospects as single - photon emitters (SPEs), but at present, the main carrier recombination mechanisms at defects in these materials are not fully understood. - Researchers hope to reveal how the carrier recombination mechanisms at defects in 2D materials are different from those in three - dimensional (3D) systems. 2. **Determining the factors for defects in 2D materials to become efficient single - photon emitters**: - In order for defects to become efficient single - photon emitters at room temperature, it is necessary to understand which factors determine the excellent performance of defects in 2D materials. - In particular, it is necessary to explore how to improve the radiative recombination rate and reduce the non - radiative recombination rate by regulating the defect states, so as to achieve single - photon emission with high quantum efficiency. 3. **Developing first - principles methods to calculate recombination rates**: - Researchers have developed first - principles - based methods for accurately calculating the radiative and non - radiative recombination rates at defects in 2D materials. - Through this method, the influence of electron - phonon coupling on the recombination process can be deeply understood, and theoretical support can be provided for optimizing the performance of single - photon emitters. 4. **The influence of strain on recombination rates**: - The research also explores the influence of strain on the non - radiative recombination rate at defects in 2D materials. - It is found that strain can effectively regulate electron - phonon coupling, significantly change the non - radiative recombination rate, and thus affect the quantum yield and photon energy of single - photon emitters. ### Summary In general, through theoretical calculations and first - principles methods, this paper reveals the key factors of carrier recombination mechanisms at defects in 2D materials, especially the dominant position of defect - defect - state recombination in 2D materials. In addition, the research also shows the potential of strain regulation in optimizing the performance of single - photon emitters. These findings provide an important theoretical basis for designing and engineering high - performance single - photon emitters.

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