In‐gap states and carrier recombination in quasi‐2D perovskite films

Bat-El Cohen,Ron Alafi,Jonathan Beinglass,Adva Shpatz Dayan,Oren Goldberg,Shachar Gold,Isaac Balberg,Leeor Kronik,Lioz Etgar,Oded Millo,Doron Azulay
DOI: https://doi.org/10.1002/solr.202300813
IF: 9.1726
2023-11-05
Solar RRL
Abstract:We study in‐gap states and their effect on recombination rates in quasi‐2D lead‐iodide based perovskites, intercalated with various spacer molecules, using a combination of scanning tunneling spectroscopy and temperature‐dependent photoconductivity measurements. The results are further analyzed by a Shockley‐Read‐Hall model. We find indications for shallow in‐gap states, positioned at about 0.15 – 0.2 eV below the bottom of the conduction band, and identify them as dominating the recombination route of photogenerated carriers in these systems, with a relatively large capture coefficient of about 10‐5‐10‐6 cm3/s at room temperature. First principles calculations based on density functional theory imply that these states are not an intrinsic effect of the inclusion of the spacer molecules, but rather one that arises from chemical defect formation or structural deformation of the perovskite layers. Our results suggest that further improvement of the performance of solar cells that are based on quasi‐2D perovskites requires, along with enhancing carrier mobility, further efforts to suppress the concentration of these detrimental defect states. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
What problem does this paper attempt to address?