Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Yijun Tong,Xiaofeng Xiang,Scott Dunham
DOI: https://doi.org/10.1016/j.commatsci.2024.113384
IF: 3.572
2024-09-26
Computational Materials Science
Abstract:Inorganic halide perovskites have been considered as higher-stability alternatives to hybrid halide perovskites for optoelectronic applications. However, the formation of defects in these materials can significantly affect carrier density and recombination lifetime. Thus, understanding their properties is of great importance for achieving improved device performance. Through GGA+U calculations with spin–orbital coupling, we calculate the properties of native defects in CsPbI 3 /CsSnI 3 and the defect-assisted non-radiative recombination rates for selected deep levels. Importantly, we discover that the iodine interstitials in CsPbI 3 and tin interstitials in CsSnI 3 have high non-radiative carrier capture rates. Besides, we also notice that complete defect structural relaxations are only achievable when large supercells are used. This work not only provides insights into potential non-radiative recombination pathways due to the formation of corresponding interstitials, but also highlights the importance of utilizing large supercells for defect calculations in perovskites.
materials science, multidisciplinary
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