Abstract:Double halide perovskites have attracted increasing interest due to their great potential to eliminate the toxicity and instability issues in lead halide perovskites. Unfortunately, octahedral cation antisites easily form in common double halide perovskites and induce deep defect levels. Here, using first-principles calculation methods, we report unusual defect properties in the double halide perovskite ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$, including the coexistence of shallow and deep defect transition energy levels of iodine vacancies, absent of octahedral cation antisites, and different dominant donor defects such as interstitials $({\mathrm{Au}}_{\mathrm{i}})$ and I substituting Au $({\mathrm{I}}_{\mathrm{Au}})$. We attribute these unusual defect properties to the multivalence effect of Au and strong covalent bonding between Au and I. Based on the defect properties, we propose two possible applications of ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$. On one hand, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ could be a useful candidate for photodetectors under I-rich growth conditions due to its relatively low carrier densities because the Fermi level is pinned near the middle of the band gap due to the strong compensation of the dominant donors ${\mathrm{Au}}_{\mathrm{i}}$ and acceptor ${\mathrm{V}}_{\mathrm{Cs}}$. On the other hand, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ can be made $n$-type if it is grown under I-poor conditions, which can be further enhanced by growing the sample at 600 K and then quenching to 300 K. Consequently, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ has potential as an $n$-type photovoltaic absorber. Our studies not only enrich the defect physics in multivalent double halide perovskites but also provide useful information for advancing ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ technologies.

Intrinsic defect properties in halide double perovskites for optoelectronic applications

Intrinsic Defect Physics in Indium-Based Lead-Free Halide Double Perovskites

Type-II Lateral Heterostructures of Monolayer Halide Double Perovskites for Optoelectronic Applications

The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Intrinsic defects in B-site columnar-ordered halide double perovskites Cs2AgPdBr5

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Electronic structure, mechanical properties and optical properties of three cobalt-based double halide perovskites: A first principles study

Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Unusual Defect Properties in Multivalent Perovskite Cs2Au2I6 : A First-Principles Study

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Roles of defects in perovskite CsPbX3 (X=I, Br, Cl): A first- principles investigation

Electronic properties of Pb-I deficient lead halide perovskites

A Systematical Study on Bands and Defects of CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles

Two-dimensional Halide Perovskites: Tuning Electronic Activities of Defects

Intrinsic Point Defects In Inorganic Perovskite Cspbi3 From First-Principles Prediction

Physics of Defects in Metal Halide Perovskites.

First Principle Study of Cesium-based Lead-free Halide Double Perovskites

Steric engineering of point defects in lead halide perovskites

Understanding the Defect Properties of Quasi-2D Halide Perovskites for Photovoltaic Applications

Defect Physics of Pseudo-cubic Mixed Halide Lead Perovskites from First Principles

Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI3