A Systematical Study on Bands and Defects of CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles

Chunqian Zhang,Hao Wang,Wenqi Huang,Yuhua Zuo,Jin Cheng

DOI: https://doi.org/10.3390/molecules29112479

IF: 4.6

2024-05-24

Molecules

Abstract:Metal halide perovskites have attracted considerable attention as novel optoelectronic materials for their excellent optical and electrical properties. Inorganic perovskites (CsPbX3, X = Cl, Br, I) are now viable alternative candidates for third-generation photovoltaic technology because of their high photoelectric conversion efficiency, high carrier mobility, good defect tolerance, simple preparation method and many other advantages. However, the toxicity of lead is problematic for practical implementation. Thus, the fabrication of lead-free perovskite materials and devices has been actively conducted. In this work, the energy band and photoelectric properties of inorganic perovskites CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) have been investigated with the first principles calculation, and the possible defect energy levels and their formation energies in different components, in particular, have been systematically studied. The advantages and disadvantages of Sn and Ge as replacement elements for Pb have been demonstrated from the perspective of defects. This study provides an important basis for the study of the properties and applications of lead-free perovskites.

chemistry, multidisciplinary,biochemistry & molecular biology

What problem does this paper attempt to address?

This paper aims to study the band structure and defect characteristics of lead-free perovskite materials CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I). Specifically: 1. **Background and Motivation**: Metal halide perovskites have attracted attention due to their excellent optoelectronic properties, especially in the application of third-generation photovoltaic technology. However, lead-based perovskites have toxicity issues, so developing lead-free perovskite materials has become a research hotspot. 2. **Research Object**: The paper selects the CsBX3 series of perovskite materials and explores their electronic properties through first-principles calculations, including band structure, density of states (DOS), and absorption coefficient. 3. **Defect Characteristics Study**: The focus is on analyzing all possible point defects (such as vacancies, substitutions, and interstitial defects) in these materials, discussing the energy level distribution and formation energy of different metals and halogen elements in these defects. In particular, the defect characteristics of Sn and Ge as substitute elements for Pb are systematically studied. 4. **Objective and Significance**: Through this study, the authors hope to reveal the mechanisms of defect existence in these materials and their impact on optoelectronic properties, while also providing guidance for the experimental preparation of different materials and predicting the performance of devices using these materials. The ultimate goal is to provide an important theoretical foundation for the research and application of lead-free perovskite materials.

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