Abstract:Despite rapid progress in the power-conversion efficiency of Pb-based perovskite solar cells, both the long-term instability and Pb toxicity are still the main challenges for their commercial applications. Here, by first-principles GW calculations, we find three kinds of two-dimensional (2D) 111-type Pb-free In-based halide perovskites of the form Cs3In2X9 (X = Cl, Br, I) as promising alternatives to the star material CH3NH3PbI3 (MAPbI(3)) because of the following excellent electronic, optical, and transport properties: (i) The 2D In-based halide perovskites are environmentally friendly lead-free materials. (ii) Compared with MAPbX(3), they have greater structural stability. (iii) As energetic photovoltaic materials, 2D Cs3In2I9 perovskites are direct-band-gap semiconductors with optimal band gaps from 1.25 eV (trilayer) to 1.47 eV (monolayer). (iv) The 2D Cs3In2X9 perovskites have ideal band structures for solid-state lighting with a wide direct-optical-band-gap range (approximately 0.94-3.54 eV), covering the whole visible-light region, and light electron (heavy hole) effective mass, which will directly enhance the defect-insensitive emission efficiency due to the localization of holes. Particularly, Cs3In2BrxCl9-x has a suitable direct optical band gap for highly desired blue emission. (v) The absorption coefficient of Cs3In2X9 is up to 7 x 10(4) cm(-1), which is between that of GaAs (10(4) cm(-1)) and that of MAPbI(3) (10(5) cm(-1)). (vi) The estimated power-conversion efficiency in Cs3In2I9 reaches 28%, which is close to that of MAPbI(3) (30%). These findings pave a way for designing nontoxic, stable, and high-performance photovoltaic and light-emitting devices.

Intrinsic Defect Physics in Indium-Based Lead-Free Halide Double Perovskites

Intrinsic defect properties in halide double perovskites for optoelectronic applications

Intrinsic defects in B-site columnar-ordered halide double perovskites Cs2AgPdBr5

Defect Engineering Of Grain Boundaries In Lead-Free Halide Double Perovskites For Better Optoelectronic Performance

Unique Ion Diffusion Properties in Lead-Free Halide Double Perovskites: A First-Principles Study

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

First-principles study on structural, electronic and optical properties of halide double perovskite Cs2AgBX6 (B = In, Sb; X = F, Cl, Br, I)

Managing Multiple Halide-Related Defects for Efficient and Stable Inorganic Perovskite Solar Cells

Mitigating deep-level defects through a self-healing process for highly efficient wide-bandgap inorganic CsPbI3-xBrx perovskite photovoltaics

Fundamental Understanding in the Performance-Limiting Factors of Cs2AgBiBr6-based Perovskite Photovoltaics

Intrinsic Point Defects In Inorganic Perovskite Cspbi3 From First-Principles Prediction

Challenges and Progress in lead‐free halide double perovskite solar cells

Exploring inorganic and nontoxic double perovskites Cs$_2$AgInBr$_{6-x}$Cl$_x$ from material selection to device design in material genome approach

Defect Compensation and Lattice Stabilization Enables High Voltage Output in Tin Halide Perovskite Solar Cells

Two-Dimensional 111-Type In-Based Halide Perovskite Cs3In2X9(X=Cl,Br,I) with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission

Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM′Br6 (M = Cu, Ag, and Au; M′ = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency

Design and Performance Exploration of a Lead-Free All-Inorganic Hydrogenated Cs2AgBiBr6-Based Double Perovskite Solar Cell: A Numerical Modeling Study

Inorganic lead-based halide perovskites: From fundamental properties to photovoltaic applications

Influence of Defects and Synthesis Conditions on the Photovoltaic Performance of Perovskite Semiconductor CsSnI3

A Systematical Study on Bands and Defects of CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles