Abstract:Double halide perovskites have attracted increasing interest due to their great potential to eliminate the toxicity and instability issues in lead halide perovskites. Unfortunately, octahedral cation antisites easily form in common double halide perovskites and induce deep defect levels. Here, using first-principles calculation methods, we report unusual defect properties in the double halide perovskite ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$, including the coexistence of shallow and deep defect transition energy levels of iodine vacancies, absent of octahedral cation antisites, and different dominant donor defects such as interstitials $({\mathrm{Au}}_{\mathrm{i}})$ and I substituting Au $({\mathrm{I}}_{\mathrm{Au}})$. We attribute these unusual defect properties to the multivalence effect of Au and strong covalent bonding between Au and I. Based on the defect properties, we propose two possible applications of ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$. On one hand, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ could be a useful candidate for photodetectors under I-rich growth conditions due to its relatively low carrier densities because the Fermi level is pinned near the middle of the band gap due to the strong compensation of the dominant donors ${\mathrm{Au}}_{\mathrm{i}}$ and acceptor ${\mathrm{V}}_{\mathrm{Cs}}$. On the other hand, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ can be made $n$-type if it is grown under I-poor conditions, which can be further enhanced by growing the sample at 600 K and then quenching to 300 K. Consequently, ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ has potential as an $n$-type photovoltaic absorber. Our studies not only enrich the defect physics in multivalent double halide perovskites but also provide useful information for advancing ${\mathrm{Cs}}_{2}{\mathrm{Au}}_{2}{\mathrm{I}}_{6}$ technologies.

Unique Ion Diffusion Properties in Lead-Free Halide Double Perovskites: A First-Principles Study

Intrinsic Defect Physics in Indium-Based Lead-Free Halide Double Perovskites

Defect Engineering Of Grain Boundaries In Lead-Free Halide Double Perovskites For Better Optoelectronic Performance

First-principles study on structural, electronic and optical properties of halide double perovskite Cs2AgBX6 (B = In, Sb; X = F, Cl, Br, I)

Intrinsic defect properties in halide double perovskites for optoelectronic applications

Halide ion migration in lead-free all-inorganic cesium tin perovskites

Theoretical and Experimental Investigation of Mixed Pb–In Halide Perovskites

Ion Diffusion Dynamics and Halogen Mixing at the Heterojunction of Halide Perovskites: Atomistic Insights

Importance of exact exchange to the geometric and electronic structures of Cs$_2$$B$$B'$$X_6$ double perovskites

Optoelectronic Evolution in Halogen-Doped Organic–Inorganic Halide Perovskites: A First-Principles Analysis

The atomic-level structure of bandgap engineered double perovskite alloys Cs2AgIn1- x Fe x Cl6

First-Principles Study Lead-Free Halide Double Perovskite Cs2RhAgX6 and Cs2IrAgX6 (X = Cl, Br and I)

Efficient Modelling of Ion Structure and Dynamics in Inorganic Metal Halide Perovskites

Dual‐Ion‐Diffusion Induced Degradation in Lead‐Free Cs 2 AgBiBr 6 Double Perovskite Solar Cells

Halide Mixing in Cs2AgBi(I x Br1- x )6 Double Perovskites: A Pathway to Tunable Excitonic Properties

First Principle Study of Cesium-based Lead-free Halide Double Perovskites

Roles of defects in perovskite CsPbX3 (X=I, Br, Cl): A first- principles investigation

Unusual Defect Properties in Multivalent Perovskite Cs2Au2I6 : A First-Principles Study

Lead-free halide double perovskites: Toward stable and sustainable optoelectronic devices

Design of High-Performance Photovoltaic Materials Via Codoping of Cs2AgPdX5 (X = Cl, Br)

Probing the structural, electronic and optical properties of Cs2Ag1-xNaxInCl6 lead-free double perovskite from first principles