Abstract:Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superconductivity, ferromagnetism, and topological states. The electrostatic doping at two-dimensional interfaces relies on ionic motion, which thus is operated at sufficiently high temperature. Here, we report the in situ tuning of quantum phases by shining light on an ionic liquid-gated interface at cryogenic temperatures. The light illumination enables flexible switching of the quantum transition in monolayer WS2 from an insulator to a superconductor. In contrast to the prevailing picture of photoinduced carriers, we find that in the presence of a strong interfacial electric field conducting electrons could escape from the surface confinement by absorbing photons, mimicking the field emission. Such an optical tuning tool in conjunction with ionic liquid gating greatly facilitates continuous modulation of carrier densities and hence electronic phases, which would help to unveil novel quantum phenomena and device functionality in various materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01467.Materials includes detailed discussion of the field emission model, the effect of photoconductivity, basic characterization of EDLT devices such as transfer curves and Hall effects, stability in multiple cycles of electrostatic gating, temporal change of resistances during light illumination, measurements of an additional sample on the h-BN substrate, calculation details of Fermi level in doped monolayer MoS2 and WS2 (PDF)This article has not yet been cited by other publications.

Lithium-ion conducting glass ceramics for electrostatic gating

Full Control of Solid-State Electrolytes for Electrostatic Gating

Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities

Electrolyte gating using ionic crystals: Demonstration of iontronics with ionic crystals

Gate-controlled Magnetic Transitions in Fe 3 GeTe 2 with Lithium Ion Conducting Glass Substrate

Electrostatic and electrochemical charging mechanisms for electric-double-layer gating media based on a crystalline LaF 3 solid electrolyte

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

Visible-light-enhanced gating effect at the LaAlO₃/SrTiO₃ interface.

Self-gating in semiconductor electrocatalysis

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Visible-light-enhanced gating effect at the LaAlO 3 /SrTiO 3 interface

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Impact of Gate Structure on the Electrophysiology Detection Behaviors for SOI Ion-Sensitive FETs

Electrostatic and Electrochemical Charging Mechanisms for Electric-Double-layer Gating Media Based on a Crystalline LaF3 Solid Electrolyte

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

Light Controllable Electronic Phase Transition in Ionic Liquid Gated Monolayer Transition Metal Dichalcogenides

Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating

Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Ion-gated Tungsten Oxide Based Electrochemical Transistors with Subthreshold Slopes Approaching the Thermodynamic Limit

Dielectric materials for electrolyte gated transistor applications

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors