Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Biqiong Yu,Guichuan Yu,Jeff Walter,Vipul Chaturvedi,Joseph Gotchnik,Sajna Hameed,John W. Freeland,Chris Leighton,Martin Greven
DOI: https://doi.org/10.1063/1.5138645
IF: 4
2020-05-18
Applied Physics Letters
Abstract:Electrolyte-based transistors utilizing ionic liquids/gels have been highly successful in the study of charge-density-controlled phenomena, particularly in oxides. Experimental probes beyond transport have played a significant role, despite challenges in their application in electric double-layer transistors. Here, we demonstrate the application of synchrotron soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) as <i>operando</i> probes of the charge state and magnetism in ion-gel-gated ferromagnetic perovskite films. Electrochemical response via oxygen vacancies at positive gate bias in LaAlO<sub>3</sub>(001)/La<sub>0.5</sub>Sr<sub>0.5</sub>CoO<sub>3−δ</sub> is used as a test case. XAS/XMCD measurements of 4–25 unit-cell-thick films first probe the evolution of hole doping (from the O <i>K</i>-edge pre-peak) and ferromagnetism (at the Co <i>L</i>-edges), to establish a baseline. <i>Operando</i> soft XAS/XMCD of electrolyte-gated films is then demonstrated, using optimized spin-coated gels with a thickness of ∼1 <i>μ</i>m and a specific composition. The application of gate voltages up to +4 V is shown to dramatically suppress the O <i>K</i>-edge XAS pre-peak intensity and Co <i>L</i>-edge XMCD, thus enabling the Co valence and ferromagnetism to be tracked upon gate-induced reduction. Soft XAS and XMCD, with appropriate electrolyte design, are thus established to be viable for the <i>operando</i> characterization of electrolyte-gated oxides.
physics, applied
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