Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains
Fai Wong,Sheung Mei Ng,Wen Zhang,Yu Kuai Liu,Ping Kwan Johnny Wong,Chi Sin Tang,Ka Kin Lam,Xu Wen Zhao,Zhen Gong Meng,Lin Feng Fei,Wang Fai Cheng,Danny von Nordheim,Wai Yeung Wong,Zong Rong Wang,Bernd Ploss,Ji-Yan Dai,Chee Leung Mak,Andrew Thye Shen Wee,Chi Wah Leung,Hon Fai Wong
DOI: https://doi.org/10.1021/acsami.0c14172
2020-12-06
Abstract:Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La<sub>0.66</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> (LSMO), are based on electrostatically induced charge carrier changes through high-<i>k</i> dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c14172?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c14172</a>.Structural and ferroelectric characterization of LSMO films on STO and P(VDF-TrFE) on the LSMO device; characterization of field-effect devices with <i>V</i><sub>g</sub> pulses; reversible modulation of LSMO channel properties; and modulation of <i>R</i><sub><i>xx</i></sub> under oxygen and vacuum ambient conditions (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c14172/suppl_file/am0c14172_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology