Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Structural Parameters of CVD Synthesized Ga 2 O 3 Nanostructures from X-ray Diffraction Analysis Derived by Scherrer, Williamson-Hall, Size-Strain Plot and Halder-Wagner Methods- A Comparative Study

Modulation of The Morphological and Optical Properties of CVD Grown Non-Stochiometric Ga 2 O 3−x Nanostructures by Various Substrate Angles

Structrual analyses of Ga2+xO3-x thin films grown on sapphire substrates

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Effect of Ga on the Morphology of SnO 2 Nano/Micro-Crystals Grown by a Thermal Evaporation Method

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

In situ X-ray diffraction study of the solvothermal formation mechanism of gallium oxide nanoparticles

Controllable Growth of Gallium Oxide Nanowires by Chemical Vapor Deposition

A simple method to synthesize gallium oxide nanosheets and nanobelts

Crystallization and bandgap variation of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing process

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Average And Local Crystal Structures Of (Ga1-Xznx)(N1-Xox) Solid Solution Nanoparticles

X studies on local structures of nanocrystalline and crystalline GaN

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Optical, Structural and Photoluminescence Properties of Gd x SrO: CdO Nanostructures Synthesized by Co Precipitation Method

Synthesis and Characterization of Gallium Oxide Nanostructures via a Soft-Chemistry Route

WT3HZ XAFS STUDIES ON LOCAL STRUCTURES OF NANOCRYSTALLINE AND

Thickness Measurement of GaN Films by X-ray Diffraction

Strain and Grain Size Determination of CeO2 and TiO2 Nanoparticles: Comparing Integral Breadth Methods versus Rietveld, μ-Raman, and TEM