Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga 2 O 3 (001)
Yuhua Tsai,Yusuke Hashimoto,ZeXu Sun,Takuya Moriki,Takashi Tadamura,Takahiro Nagata,Piero Mazzolini,Antonella Parisini,Matteo Bosi,Luca Seravalli,Tomohiro Matsushita,Yoshiyuki Yamashita
DOI: https://doi.org/10.1021/acs.nanolett.4c00482
IF: 10.8
2024-03-09
Nano Letters
Abstract:We investigated atomic site occupancy for the Si dopant in Si-doped κ-Ga(2)O(3)(001) using photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and PEH, we found that the Si dopant had one chemical state, and three types of inequivalent Si substitutional sites (Si(Ga)) were formed. The ratios for the inequivalent tetrahedral, pentahedral, and octahedral Si(Ga) sites were estimated to be 55.0%, 28.1%, and 16.9%, respectively. Higher (lower) ratios for the three...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology