Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

The Effects of Vacancy and Oxidation on Black Phosphorus Nanoresonators

Evolution of Intrinsic Vacancies and Prolonged Lifetime of Vacancy Clusters in Black Phosphorene

Evolution of Intrinsic Vacancies and Prolonged Lifetimes of Vacancy Clusters in Black Phosphorene.

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Photoabsorption Tolerance of Intrinsic Point Defects and Oxidation in Black Phosphorus Quantum Dots.

Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Thermal conductivity of armchair black phosphorus nanotubes: a molecular dynamics study

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

The Role of H2O and O2 Molecules and Phosphorus Vacancies in the Structure Instability of Phosphorene

Degradation of Black Phosphorus: a Real-Time 31 P NMR Study

Electronic Self-Passivation of Single Vacancy in Black Phosphorus Via Ionization.

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Nanoscopy of Black Phosphorus Degradation

Effect of TCNQ layer cover on oxidation dynamics of black phosphorus

High-quality sandwiched black phosphorus heterostructure and its quantum oscillations

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

The effect of P vacancies on the activity of cobalt phosphide nanorods as oxygen evolution electrocatalyst in alkali

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere