Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles

Jingyuan Huang,Qiang Zhang,Xiaojie Liu,Yin Wang,Haitao Yin
DOI: https://doi.org/10.1039/d3cp01266b
IF: 3.3
2023-06-22
Physical Chemistry Chemical Physics
Abstract:Experimental fabrication of phosphorene nanoribbons (PNRs) would eventually include defects, which will affect the performance of PNR-based devices. In this work, we theoretically proposed and investigated all-PNRs device with single vacancy (SV) defects and double vacancy (DV) defects along a zigzag direction, taking into account both hydrogen passivation and unpassivation scenarios. We discovered that in the situation of hydrogen passivation, the DV defect can introduce in-gap states while the SV defect can result in P-type doping. The unpassivated hydrogen nanoribbon appears an edge state with a strong influence on transport properties, which also masks the effect of defects on transport. Furthermore, it demonstrates the phenomenon of negative differential resistance, the occurrence and characteristics of which are not particularly dependent on the presence or absence of defects.
chemistry, physical,physics, atomic, molecular & chemical
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