Nondestructive method of thin film dielectric constant measurements by two-wire capacitor

Svitlana Kondovych,Igor Luk'yanchuk

DOI: https://doi.org/10.1002/pssb.201600476

2016-11-27

Abstract:We suggest the nondestructive method for determination of the dielectric constant of substrate-deposited thin films by capacitance measurement with two parallel wires placed on top of the film. The exact analytical formula for the capacitance of such system is derived. The functional dependence of the capacitance on dielectric constants of the film, substrate, and environment media and on the distance between the wires permits to measure the dielectric constant of thin films for the vast set of parameters where previously proposed approximate methods are less efficient.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to measure the dielectric constant of a thin film deposited on a substrate nondestructively. Traditional methods, such as using a parallel - plate capacitor to measure the dielectric constant, may interfere with the functionality and integrity of the device, especially at the nanoscale. In addition, traditional methods may be affected by leakage currents caused by defects, resulting in inaccurate measurement results.

To solve these problems, the author proposes a new method: determining the dielectric constant of the thin film by measuring the capacitance between two parallel wire electrodes. This method does not require the deposition of a bottom electrode beneath the thin film and does not affect the optical properties of the system, so it is a nondestructive measurement method.

### Specific Problem Description

1. **Limitations of Traditional Methods**:
- The traditional parallel - plate capacitor method requires the deposition of a bottom electrode beneath the thin film, which may damage the functionality and integrity of the device.
- The top electrode may affect the optical properties of the system.
- Leakage currents caused by defects can distort the measurement results.
- Nanoscale capacitance microscopy techniques (such as atomic force microscopy) are also limited by the need to deposit the thin film on a conductive substrate.

2. **Advantages of the New Method**:
- Nondestructive: Both electrodes are located outside and close to the thin film.
- Applicable to various types of substrates and environmental media.
- Does not rely on "partial capacitance" or "magnetic wall" approximations, so it is applicable to a wider range of material types.

### Main Contributions of the Paper

The author derives the exact capacitance formula for a two - parallel - wire - electrode system and verifies the effectiveness of this method through experiments. This formula takes into account factors such as the dielectric constants of the thin film, substrate, and environmental medium, as well as the distance between the wires, so that the dielectric constant of the thin film can be accurately measured.

### Key Formula

The reciprocal expression of capacitance is:

\[
C^{-1}_l=\frac{1}{\pi\epsilon_0}\left[\frac{\ln\left(\frac{Ad}{\lambda}\right)+\left(1 - \frac{h}{\lambda\beta}\right)g\left(\frac{d}{\lambda}\right)}{\epsilon_1+\epsilon_3}\right]
\]

where:

- \(A\) is a constant related to wire - scale truncation.
- \(\beta = \gamma+\frac{\epsilon_3}{2\epsilon_2(1 + \gamma)}\)
- \(\lambda=\gamma\frac{(\epsilon_2+\epsilon_1)(\epsilon_2+\epsilon_3)}{\epsilon_2(\epsilon_1+\epsilon_3)}h\)
- \(g(x)=\left(\frac{\pi}{2}-\text{Si}(x)\right)\sin(x)-\text{Ci}(x)\cos(x)\)

By measuring the capacitance at different wire spacings and fitting it with the above formula, the dielectric constant of the thin film can be determined.

### Conclusion

This paper provides a new nondestructive method for measuring the dielectric constant of a thin film, which is applicable to various substrates and environmental media. This method is based on accurate theoretical derivations and its effectiveness has been verified through experiments. This is of great significance for optimizing the dielectric properties of nano - devices.