Abstract:Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a wide-bandgap semiconductor is nonetheless a crucial quantity in determining the operation of semiconductor devices and the performance of solid-state single-photon emitters embedded within the semiconductor devices. In this work we accurately compute the average electric field measured at the location of N$V^-$ charged defects for the substitutional N (N$_\text{C}$) concentration of $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ for the commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve this result by evaluating the leading-order contribution to the electric field far away from the surface, which comes from the N$_\text{C}$ defects that induce the ionization of the N$V^-$. Our results use density-functional theory (DFT) and the principle of band bending. Our work has the potential to aid both in the prediction of the functioning of semiconductor devices and in the prediction and correction of the spectral diffusion that often plagues the optical frequencies of solid-state single-photon emitters upon repeated photoexcitation measurements. Our results for the timescales involved in thermally driven charge transfer also have the potential to aid in investigations of charge dynamics.

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO 2

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

Coulomb Contribution to Shockley–Read–Hall Recombination

Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors

Excitonic Shockley-Read-Hall recombination in organic semiconductors

Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis

Dynamics of bound exciton complexes in CdS nanobelts.

Coulomb contribution to Shockley-Read-Hall (SRH) recombination

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

First-principles calculations of indirect Auger recombination in nitride semiconductors

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States

Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor

Prediction of Shockley–Read–Hall lifetimes in strained layer superlattices for mid-wave and long-wave infrared photodetectors

New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures