Abstract:First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be attributed to nitrogen vacancies, but is due to unintentional incorporation of donor impurities. Native point defects may play a role in compensation and in phenomena such as the yellow luminescence, which can be attributed to gallium vacancies. In the section on impurities, specific attention will be focused on dopants. Oxygen, which is commonly present as a contaminant, is a shallow donor in GaN but becomes a deep level in AlGaN due to a DX transition. Magnesium is almost universally used as the p-type dopant, but hole concentrations are still limited. Reasons for this behavior are discussed, and alternative acceptors are examined. Hydrogen plays an important role in p-type GaN, and the mechanisms that underlie its behavior are explained. Incorporating hydrogen along with acceptors is an example of codoping; a critical discussion of codoping is presented. Most of the information available to date for defects and impurities in nitrides has been generated for GaN, but we will also discuss AlN and InN where appropriate. We conclude by summarizing the main points and looking towards the future.

First-principles calculations of indirect Auger recombination in nitride semiconductors

Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles

Theoretical study of the temperature dependence of Auger-Meitner recombination in (Al,Ga)N quantum wells

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Killing Auger recombination in nanostructures by carrier spin polarization

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

The effect of Auger heating on intraband carrier relaxation in semiconductor quantumrods

Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors

Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

First-principles calculations for defects and impurities: Applications to III-nitrides

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

Deciphering the photophysical properties of near-infrared quantum emitters in AlGaN films by transition dynamics

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes

Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

The influence of Auger recombination on the performance of quantum-dot light-emitting diodes

Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Regulating the Auger Recombination Process in Two-Dimensional Sn-Based Halide Perovskites