Abstract:Solid-state elastic-wave phonons are a promising platform for a wide range of quantum information applications. An outstanding challenge and enabling capability in harnessing phonons for quantum information processing is achieving strong nonlinear interactions between them. To this end, we propose a general architecture using piezoelectric-semiconductor heterostructures consisting of a piezoelectric acoustic material hosting phonon modes in direct proximity to a two-dimensional electron gas (2DEG). Each phonon in the piezoelectric material carries an electric field, which extends into the 2DEG. The fields induce polarization of 2DEG electrons, which in turn interact with other piezoelectric phononic electric fields. The net result is coupling between the various phonon modes. We derive, from first principles, the nonlinear phononic susceptibility of the system. We show that many nonlinear processes are strongly favored at high electron mobility, motivating the use of the 2DEG to mediate the nonlinearities. We derive in detail the first, second, and third-order susceptibilities and calculate them for the case of a lithium niobate surface acoustic wave interacting with a GaAs-AlGaAs heterostructure 2DEG. We show that, for this system, the strong third-order nonlinearity could enable single-phonon Kerr shift in an acoustic cavity that exceeds realistic cavity linewidths, potentially leading to a new class of acoustic qubit. We further show that the strong second-order nonlinearity could be used to produce a high-gain, traveling-wave parametric amplifier to amplify--and ultimately detect--the outputs of the acoustic cavity qubits. Assuming favorable losses in such a system, these capabilities, combined with the ability to efficiently transduce phonons from microwave electromagnetic fields in transmission lines, thus hold promise for creating all-acoustic quantum information processors.

Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles

Strain Effects on Auger-Meitner Recombination in Silicon

First-principles calculations of indirect Auger recombination in nitride semiconductors

Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures

First-Principle Investigations of Carrier Multiplication in Si Nanocrystals: a Short Review

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost

Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Photon Momentum Enabled Light Absorption in Silicon

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Anharmonic decay of phonons in semiconductors from first-principles calculations

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Photon momentum enabled light absorption in bulk silicon

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Controlling phonons and photons at the wavelength-scale: silicon photonics meets silicon phononics

Ab-Initio Calculations of Nonlinear Susceptibility and Multi-Phonon Mixing Processes in a 2DEG-Piezoelectric Heterostructure