Killing Auger recombination in nanostructures by carrier spin polarization

Alexander Khaetskii,Igor Žutić

DOI: https://doi.org/10.48550/arXiv.1603.03410

2016-03-11

Abstract:In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-dimensional character of the system, given by the ratio of the Fermi energy of electrons and the separation of the electron levels quantized in the growth direction. Our predictions can be tested experimentally and we discuss their implications for semiconductor lasers relying on injection of spin-polarized electrons.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to significantly reduce the Auger recombination rate (non - radiative recombination) in semiconductor nanostructures by injecting spin - polarized carriers**.

### Problem Background:
In semiconductor nanostructures, Auger recombination is an important non - radiative recombination process, which will lead to energy loss and limit device performance. Especially in nanostructures such as quantum wells (QWs), due to the quantum confinement effect, the momentum conservation condition is relaxed, resulting in a significant increase in the Auger recombination rate. This enhanced Auger recombination has a negative impact on the performance of lasers, light - emitting diodes (LEDs), solar cells and other devices that rely on carrier lifetimes.

### Solution:
The authors propose a method to suppress the Auger recombination rate by injecting spin - polarized carriers. Specifically, they studied the change in the Auger recombination rate when electrons are spin - polarized in a quantum well. It is assumed that holes are non - polarized and the spin - orbit coupling in the conduction band can be ignored.

### Key Findings:
1. **Effect of Spin Polarization**: When electrons are fully spin - polarized, the Auger recombination rate is almost completely suppressed. This is due to the Pauli exclusion principle, which makes it impossible for two electrons with the same spin to occupy the same quantum state, thereby reducing the possibility of recombination.

2. **Suppression Factor**: The suppression factor is determined by the two - dimensional characteristics of the system, specifically the ratio of the electron Fermi energy to the quantization energy level spacing along the growth direction. For a fully spin - polarized system, the degree to which the Auger recombination rate is suppressed relative to a non - polarized system can be expressed by the formula:
\[
R(P_n)=R(0)(1 - P_n^2)
\]
where \(P_n\) is the spin polarization degree of the electron density, defined as:
\[
P_n=\frac{n_\uparrow - n_\downarrow}{n_\uparrow + n_\downarrow}
\]
Here, \(n_\uparrow\) and \(n_\downarrow\) are the electron densities with spin - up and spin - down, respectively.

3. **Experimental Verification**: The authors point out that their theoretical predictions can be verified by experiments, and this spin - polarized carrier injection technique has been applied in spin lasers and is expected to further improve the performance of these devices.

### Significance:
This research not only provides a new method to suppress Auger recombination and thus improve the performance of semiconductor devices, but also provides theoretical support for the development of the spintronics field. Especially for devices that rely on high - efficiency carrier injection (such as spin lasers), this method may bring significant advantages.