Spin-Lasers: Spintronics Beyond Magnetoresistance

Igor Žutić,Gaofeng Xu,Markus Lindemann,Paulo E. Faria Junior,Jeongsu Lee,Velimir Labinac,Kristian Stojšić,Guilherme M. Sipahi,Martin R. Hofmann,Nils C. Gerhardt

DOI: https://doi.org/10.1016/j.ssc.2020.113949

2020-05-02

Abstract:Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to achieve room - temperature spintronics applications beyond the traditional magnetoresistance effect by introducing spin - polarized carriers into semiconductor lasers. Specifically, the article explores the working principle of spin - lasers and their potential in high - speed modulation, low - power consumption, and information transmission.

### Main problems
1. **Achieving room - temperature spintronics applications**:
- Traditional spintronics mainly relies on the magnetoresistance effect, while spin - lasers provide a new approach to achieve spintronics applications at room temperature through the spin polarization of carriers.

2. **Improving laser performance**:
- Spin - lasers can not only expand the functions of spintronic devices but also significantly improve the performance of lasers, for example, achieving a modulation frequency an order of magnitude faster than that of traditional lasers and supporting lower power consumption.

3. **Understanding the influence of spin polarization on laser operation**:
- By introducing spin - polarized carriers, study their influence on the steady - state and dynamic responses of lasers, especially the influence of spin relaxation time and refractive index anisotropy on laser performance.

### Specific problems
- **Threshold reduction**: Spin - lasers can achieve a lower threshold current through the injection of spin - polarized carriers, thereby reducing the energy required to start the laser.

- **Ultra - fast operation**: Spin - lasers utilize the short carrier spin relaxation time and large refractive index anisotropy to achieve ultra - fast operation speeds, which are considered unfavorable factors in traditional lasers.

- **Circularly polarized light emission**: The recombination of spin - polarized carriers transfers angular momentum to photons, resulting in the emission of circularly polarized light, which is an important characteristic of spin - lasers.

- **Dynamic response**: Study the dynamic response of spin - lasers under different modulation conditions, including intensity modulation (IM) and polarization modulation (PM), and explore the influence of spin relaxation time on it.

### Mathematical formulas
Some of the key formulas involved in the article include:

- Parameterized representation of threshold reduction:
\[
r = 1-\frac{J_{T1}}{J_T}
\]
where \( J_{T1} \) is the threshold current of the majority - spin carriers and \( J_T \) is the threshold current without spin - polarized carriers.

- Relaxation oscillation frequency:
\[
\omega_R^2=\Gamma g_0\left(\frac{n_T}{\tau_r}\right)\left(\frac{J_0}{J_T}-1\right)
\]
where \( \Gamma \) is the optical confinement factor, \( g_0 \) is the gain constant, \( n_T \) is the transparency density, and \( \tau_r \) is the carrier recombination time.

Through these studies, the paper aims to provide theoretical basis and experimental guidance for the future development of spintronics and laser technology.