Excitonic Shockley-Read-Hall recombination in organic semiconductors

Noel C. Giebink and Stephen R. Forrest
DOI: https://doi.org/10.1103/physrevapplied.21.064019
IF: 4.6
2024-06-11
Physical Review Applied
Abstract:Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. These results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts. https://doi.org/10.1103/PhysRevApplied.21.064019 © 2024 American Physical Society
physics, applied
What problem does this paper attempt to address?