Abstract:The progress of advanced materials has invoked great interest in promising novel biosensing applications. Field-effect transistors (FETs) are excellent options for biosensing devices due to the variability of the utilized materials and the self-amplifying role of electrical signals. The focus on nanoelectronics and high-performance biosensors has also generated an increasing demand for easy fabrication methods, as well as for economical and revolutionary materials. One of the innovative materials used in biosensing applications is graphene, on account of its remarkable properties, such as high thermal and electrical conductivity, potent mechanical properties, and high surface area to immobilize the receptors in biosensors. Besides graphene, other competing graphene-derived materials (GDMs) have emerged in this field, with comparable properties and improved cost-efficiency and ease of fabrication. In this paper, a comparative experimental study is presented for the first time, for FETs having a channel fabricated from three different graphenic materials: single-layer graphene (SLG), graphene/graphite nanowalls (GNW), and bulk nanocrystalline graphite (bulk-NCG). The devices are investigated by scanning electron microscopy (SEM), Raman spectroscopy, and I-V measurements. An increased electrical conductance is observed for the bulk-NCG-based FET, despite its higher defect density, the channel displaying a transconductance of up to ≊4.9×10-3 A V-1, and a charge carrier mobility of ≊2.86×10-4 cm2 V-1 s-1, at a source-drain potential of 3 V. An improvement in sensitivity due to Au nanoparticle functionalization is also acknowledged, with an increase of the ON/OFF current ratio of over four times, from ≊178.95 to ≊746.43, for the bulk-NCG FETs.

Room temperature nanostructured graphene transistors with high on-off ratio

Graphene Transistors for Interfacing with Cells: Towards a Deeper Understanding of Liquid Gating and Sensitivity

Room-Temperature All-Semiconducting Sub-10-Nm Graphene Nanoribbon Field-Effect Transistors

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

High-Performance Photoresponsive Organic Nanotransistors with Single-Layer Graphenes as Two-Dimensional Electrodes

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

High frequency and noise performance of GFETs

High-frequency self-aligned graphene transistors with transferred gate stacks

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

Optimizing the fabrication process for high performance graphene field effect transistors.

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Room-Temperature, Low-Impedance and High-Sensitivity Terahertz Direct Detector Based on Bilayer Graphene Field-Effect Transistor

Vertical graphene-base hot-electron transistor.