Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

A strained silicon cold electron bolometer using Schottky contacts

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

Response of a Cold-Electron Bolometer in a coplanar antenna system

High-sensitivity transition-edge-sensed bolometers: improved speed and characterization with AC and DC bias

Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

High-T/sub c/ bolometers with silicon-nitride spiderweb suspension for far-infrared detection

The Simons Observatory: Differentiating Thermal and Optical Effects in Superconducting Transition-Edge Sensing Bolometers

Silicon-Based Antenna-Coupled Polarization-Sensitive Millimeter-Wave Bolometer Arrays for Cosmic Microwave Background Instruments

Simulations of athermal phonon propagation in a cryogenic semiconducting bolometer

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Thermal and Optical Analysis of Amorphous Silicon Micro-Bolometer

Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

Optical, Mechanical and Electrical Characteristics of Thermal Uncooled Bolometric Type Detector Based on Vanadium Oxide

Operation of a Wideband Terahertz Superconducting Bolometer Responding to Quantum Cascade Laser Pulses

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

Study on new structure uncooled a-Si microbolometer for infrared detection

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Performance limits due to thermal transport in graphene single-photon bolometers

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY