Structural stability and energy-gap modulation through atomic protrusion in freestanding bilayer silicene

Yuki Sakai,Atsushi Oshiyama

DOI: https://doi.org/10.1103/PhysRevB.91.201405

2015-04-24

Abstract:We report on first-principles total-energy and phonon calculations that clarify structural stability and electronic properties of freestanding bilayer silicene. By extensive structural exploration, we reach all the stable structures reported before and find four new dynamically stable structures, including the structure with the largest cohesive energy. We find that atomic protrusion from the layer is the principal relaxation pattern which stabilizes bilayer silicene and determines the lateral periodicity. The hybrid-functional calculation shows that the most stable bilayer silicene is a semiconductor with the energy gap of 1.3 eV.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **To study the structural stability and energy - gap regulation of free - standing bilayer silicene through atomic protrusion**.

Specifically, the author hopes to clarify the following issues through first - principles total - energy and phonon calculations:

1. **Structural stability**: Determine the stable structures of free - standing bilayer silicene under different lateral periodicities. Through extensive structural exploration, find all the reported stable structures and discover new dynamically stable structures.

2. **Electronic properties**: Study the electronic characteristics of these stable structures, especially the change of the energy gap. Understand how atomic protrusions affect the semiconductor properties of bilayer silicene.

3. **Optimal periodicity**: Determine the influence of atomic protrusions on the lateral periodicity of bilayer silicene and find the optimal periodic structure.

### Main findings:
- The author discovered four new dynamically stable structures and confirmed all the previously reported stable structures.
- Atomic protrusion is the main relaxation mode of bilayer silicene, which can stabilize the structure and determine the lateral periodicity.
- The most stable bilayer silicene structure is hex - OR - 2×2, with an energy gap of 1.3 eV, showing semiconductor properties.

### Core contributions of the paper:
- Systematically revealed the rich structural diversity of bilayer silicene and its relationship with electronic properties.
- Proposed atomic protrusion as a key mechanism for stabilizing bilayer silicene and pointed out the optimal lateral periodicity.

### Formula representation:
The formulas involved in the paper are mainly concentrated in the first - principles calculations in materials science, such as total energy and phonon dispersion relations. Here are the Markdown representations of some formulas:

- Total energy formula:
\[
E_{\text{total}}=E_{\text{electronic}} + E_{\text{nuclear}}
\]

- Energy - gap formula:
\[
E_g = E_c - E_v
\]
where \(E_c\) is the energy at the bottom of the conduction band and \(E_v\) is the energy at the top of the valence band.

Through these studies, the author provides an important theoretical basis for understanding the structure and electronic properties of bilayer silicene.