Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Modeling Interlayer Interactions and Phonon Thermal Transport in Silicene Bilayer

Anisotropic In-Plane Thermal Conductivity in Multilayer Silicene

Decoupled Electron and Phonon Transports in Hexagonal Boron Nitride-Silicene Bilayer Heterostructure

Band Gap Opening in Bilayer Silicene by Alkali Metal Intercalation

Bilateral Substrate Effect on the Thermal Conductivity of Two-Dimensional Silicon

Thermal Conductivity of Silicene Calculated Using an Optimized Stillinger-Weber Potential

Superconductivity in Ca-intercalated bilayer silicene

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

First-principles prediction of phononic thermal conductivity of silicene: A comparison with graphene

Thermal Conductivity of Silicene from First-Principles

Molecular Dynamics Analysis of the Thermal Conductivity of Graphene and Silicene Monolayers of Different Lengths

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Molecular dynamics study of interfacial thermal transport between silicene and substrates

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles

Effects of Interfacial Roughness on Phonon Transport in Bilayer Silicon Thin Films

Enhancing the Ballistic Thermal Transport of Silicene Through Smooth Interface Coupling

Phonon Thermal Properties of Heterobilayers with a Molecular Dynamics Study

The Formation and Electronic Properties of Hydrogenated Bilayer Silicene from First-Principles

Thermal Management in Silicene Nanosheets with Designed Cavities by Molecular Dynamic Simulations

Modulating Phonon Transport in Bilayer Black Phosphorus: Unraveling the Interplay of Strain and Interlayer Quasicovalent Bonds

Quantum nuclear motion in silicene: Assessing structural and vibrational properties through path-integral simulations