Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Silicite: The layered allotrope of silicon

Stable single-layer honeycomb like structure of silica

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Novel 2D Silica Monolayers with Tetrahedral and Octahedral Configurations

Stabilized silicene within bilayer graphene: A proposal based on molecular dynamics and density-functional tight-binding calculations

SiC siligraphene: a novel SiC allotrope with wide tunable direct band gap and strong anisotropy

A New Metastable Metallic Silicon Allotrope

Observation of Van Hove Singularities in Twisted Silicene Multilayers.

Local Reconstructions of Silicene Induced by Adatoms

Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet

Stable Porous Crystalline Silicon with Nanotubular Structure: A Predicted Allotrope with Direct Band Gap

Silicene Beyond Mono-layers - Different Stacking Configurations And Their Properties

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Unveiling a Novel Silicene-Like Material: A DFT Study on Pentahexoctite-Silicon and Its Optoelectronic Characteristics

Physics of Silicene Stripes

Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning

Rise of Silicene: A Competitive 2d Material

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Thermally-driven phase transitions in freestanding low-buckled silicene, germanene, and stanene

Structural stability and energy-gap modulation through atomic protrusion in freestanding bilayer silicene