Stable single-layer honeycomb like structure of silica

V. Ongun Özçelik,S. Cahangirov,S. Ciraci

DOI: https://doi.org/10.1103/PhysRevLett.112.246803

2014-06-11

Abstract:Silica or SiO$_2$, the main constituent of earth's rocks has several 3D complex crystalline and amorphous phases, but it does not have a graphite like layered structure in 3D. Our theoretical analysis and numerical calculations from the first-principles predict a single-layer honeycomb like allotrope, h$\alpha$-silica, which can be viewed to be derived from the oxidation of silicene and it has intriguing atomic structure with re-entrant bond angles in hexagons. It is a wide band gap semiconductor, which attains remarkable electromechanical properties showing geometrical changes under external electric field. In particular, it is an auxetic metamaterial with negative Poisson's ratio and has a high piezoelectric coefficient. While it can form stable bilayer and multilayer structures, its nanoribbons can show metallic or semiconducting behavior depending on their chirality. Coverage of dangling Si orbitals by foreign adatoms can attribute new functionalities to h$\alpha$-silica. In particular, Si$_2$O$_5$, where Si atoms are saturated by oxygen atoms from top and bottom sides alternatingly can undergo a structural transformation to make silicatene, another stable, single layer structure of silica.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to predict and verify whether silica (SiO₂) has a single - layer honeycomb - like structure similar to graphene. Specifically, through theoretical analysis and first - principles calculations, the authors predicted a new single - layer silica allotrope named hα - silica (hα - silica). This structure has the following characteristics:

1. **Structural properties**:
- hα - silica is a single - layer honeycomb - like structure and can be regarded as being formed by the oxidation of silicene.
- Its atomic structure is complex, and the bond angles in the hexagons are re - entrant bond angles.

2. **Electronic properties**:
- hα - silica is a wide - band - gap semiconductor. Its energy gap is 2.2 eV in GGA calculations and 3.3 eV in HSE calculations.
- Its conduction band and valence band are mainly contributed by the orbitals of silicon atoms with different hybridizations.

3. **Mechanical properties**:
- hα - silica has a negative Poisson's ratio, which means that when it is stretched, it not only elongates in the stretching direction but also expands in the perpendicular direction.
- It has high in - plane stiffness and a high piezoelectric coefficient.

4. **Multilayer structures and nanoribbons**:
- hα - silica can form stable bilayer and multilayer structures.
- Its nanoribbons can exhibit metallic or semiconductor behavior depending on the chirality.

5. **Functionalization**:
- By adsorbing other atoms (such as O, H, F) onto the dangling silicon atoms, hα - silica can acquire new functions.
- In particular, for the Si₂O₅ structure, when the silicon atoms are alternately saturated by oxygen atoms from the top and bottom, it can be transformed into another stable single - layer structure - silicatene.

In general, through theoretical calculations and simulations, this paper systematically studied the structural, electronic, and mechanical properties of hα - silica and explored its potential application prospects, especially in fields such as composite materials, functional coatings, nanoelectronics, and nanocapacitors.