Abstract:UV absorption spectroscopy of artificial cubic boron nitride (cBN) single crystal flake, synthesized under high-temperature and high-pressure, was studied in the present paper. UV WINLAB spectrometer was used in the experiments, and MOLECULAR SPECTROSCOPY software was used for data analysis. The UV-cBN limit of 198 nm was showed in this test by a special fixture quartz sample. We calculated the energy gap by virtue of the formula: lambda0 = 1.24/E(g) (microm). The energy gap is 6. 26 eV. There are many viewpoints about the gap of cBN. By using the first-principles theory to calculate energy band structure and density of electronic states of cBN, an indirect transition due to electronics in valence band jumping into conduction band by absorbing photon can be confirmed. That leads to UV absorption. The method of calculation was based on the quantum mechanics of CASTEP in the commercial software package of Cerius2 in the Co. Accerlrys in the United States. The theory of CASTEP is based on local density approximation or gradient corrected LDA. The crystal parameter of cBN was input to the quantum mechanics of CASTEP in order to construct the crystal parameter model of cBN. We calculated the energy gap of cBN by the method of gradient corrected LDA. The method underestimates the value of nonconductor by about 1 to 2 eV. We gaot some opinions as follows: cBN is indirect band semiconductor. The energy gap is 4.76 eV, less than our experiment. The reason may be defect that we ignored in calculating process. It was reported that the results by first principles method of calculation of the band generally was less than the experimental results. This paper shows good UV characteristics of cBN because of the good agreement of experimental results with the cBN band width. That is a kind of development prospect of UV photo-electronic devices and high-temperature semiconductor devices.

Investigation of the Cubic Boron Nitride Nucleation under the High Pressure and the High Temperature

New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

High pressure sintering behavior and mechanical properties of cBN-Ti 3Al and cBN-Ti 3Al-Al composite materials

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

Prediction of Formation of Cubic Boron Nitride by Construction of Temperature–pressure Phase Diagram at the Nanoscale

High-pressure synthesis of Al<sub>2</sub>O<sub>3</sub>-cBN composites: Effect of thermodynamic condition and cBN volume fraction on their microstructure and properties

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

High-pressure Synthesis of Tungsten Carbide–cubic Boron Nitride (wc–cbn) Composites: Effect of Cbn Particle Size and Volume Fraction on Their Microstructure and Properties

Ab initio study of pressure-dependent phonon heat conduction in cubic boron nitride

Title: Periodic Mesoporous Hexagonal Boron Nitride at High Pressure: A Route to Cubic Boron Nitride Nanocrystals and Mesoporous Cubic Boron Nitride

Small onion-like BN leads to ultrafine-twinned cubic BN

Ab Initio Study on the Phase Transition of Cubic Boron Nitride with Lithium-Based Catalysts

Shock Compression Behavior of a Mixture of Cubic and Hexagonal Boron Nitride

Synthesis and characterization of cubic boron nitride (Al)-Al2O3 composites under high pressure and high temperature conditions

The formation of sp3 bonding in compressed BN

The Formation of Sp 3 Bonding in Compressed BN

[Study of cubic boron nitride crystal UV absorption spectroscopy]

Self-bonding mechanism of pure polycrystalline cubic boron nitride under high pressure and temperature

Preparation and Properties of Cubic BN Sintered Compact with AlN.

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Equation of State of Cubic Boron Nitride at High Pressures and Temperatures