Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

Matthew Pelliccione,John Bartel,Adam Sciambi,Loren Pfeiffer,Ken West,David Goldhaber-Gordon
DOI: https://doi.org/10.1063/1.4901174
2014-09-02
Abstract:Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this Letter, we present our progress in developing a technique called "virtual scanning tunneling microscopy" that allows local tunneling into a high mobility 2DES. Using a specially-designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-200 nm resolution.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is how to achieve local imaging in high - mobility two - dimensional electron systems (2DESs). Specifically, the traditional scanning tunneling microscopy (STM) technique cannot be directly applied to these systems because high - mobility 2DESs are located at the buried - layer interface of semiconductors. Therefore, researchers have developed a new technique called "Virtual Scanning Tunneling Microscopy (VSTM)". ### Specific Background and Challenges of the Problem 1. **Limitations of Traditional STM**: - High - mobility 2DESs are usually located at the buried - layer interface of semiconductor materials, which makes it impossible for traditional STM probes to directly contact these electron systems. - The existence of buried - layer 2DESs makes it impossible for traditional STM techniques to effectively detect their local structures and charge distributions. 2. **Research Requirements**: - Understand the complex local charge - ordering phenomena in high - mobility 2DESs, such as charge - density waves (CDW) and the microscopic emulsified phase between Fermi liquid and Wigner crystal. - Explore non - trivial spatial charge - ordering phenomena such as quantum Hall stripes, which form at semi - integer filling factors and exhibit anisotropic transport along different crystal axes. ### Solutions of VSTM Technology To solve the above problems, researchers proposed VSTM technology. Its core idea is to change the properties of the tunneling barrier from a fixed surface barrier to a tunable tunneling barrier inside the semiconductor heterostructure. The specific methods are as follows: - **Double - layer GaAs/AlGaAs Heterostructure**: A double - layer GaAs/AlGaAs heterostructure containing two independent 2DESs was designed. The tunneling coupling between the two 2DESs can be regulated by an electrostatic gate. - **Scanning Probe Control**: An atomic force microscope (AFM) probe with a metal tip was used. By scanning the heterostructure above the tip, the height of the tunneling barrier was locally changed, thereby enhancing the tunneling current below the tip. - **High - Resolution Imaging**: By oscillating the probe height instead of the voltage, clearer imaging results were achieved, and the spatial resolution could be improved to the sub - 200 - nm level. ### Main Contributions of the Paper - **Verify the Feasibility of VSTM Technology**: It shows how to use VSTM technology to perform local tunneling imaging on high - mobility 2DESs. - **Improve Spatial Resolution**: By optimizing the probe height and electric field regulation, a spatial resolution of about 195 nm was achieved, approaching the theoretically predicted 40 - nm limit. - **Future Application Prospects**: VSTM technology can be used to study phenomena such as quantum Hall edge states, defects, and oscillating electron density of states near the edge, further expanding the understanding of two - dimensional electron systems. In conclusion, this paper has solved the technical problem of local imaging of high - mobility 2DESs and provided new tools and methods for studying complex local charge - ordering phenomena.