Abstract:The fractional quantized Hall state (FQHS) at the filling factor {\nu} = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the MBE growth to provide high 5/2 gap energies in "as-grown" samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in AlxGa1-xAs. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is **how to improve the energy gap of the fractional quantum Hall state (FQHS) with filling factor ν = 5/2 by optimizing the molecular beam epitaxy (MBE) growth parameters**. Specifically, the authors hope to directly achieve a two - dimensional electron gas (2DEG) with a high 5/2 energy gap in "native" samples by optimizing the growth conditions without relying on illumination or gate techniques. This will help overcome the decoherence problem in quantum computing and promote the development of topological quantum computing. ### Main research contents and methods: 1. **Optimizing MBE growth parameters**: - **Setback distance**: Increase the distance between the doping layer and the 2DEG to reduce remote impurity scattering (RI - scattering), thereby increasing the 5/2 energy gap. - **Background impurity reduction**: By reducing the temperatures of the substrate and the evaporation source, reduce the introduction of background impurities, and then improve the electron mobility and the 5/2 energy gap. - **Al component reduction**: Reduce the Al component to reduce its segregation in the quantum well, thereby reducing background impurity scattering. 2. **Comparing different doping schemes**: - **Traditional DX doping** vs. **Quantum well (QW) doping**: QW doping forms an efficient shielding layer by introducing a doping layer in a narrow GaAs quantum well, reducing the influence of charge fluctuations on the 2DEG. 3. **Experimental verification**: - Prepared multiple samples and evaluated the influence of different growth parameters on the 5/2 energy gap through magnetic transport measurements (such as Arrhenius plots, Rxx and Rxy measurements). - Compared the electron density, mobility and activation energy gap of different samples, and analyzed the specific influence of each parameter on the 5/2 energy gap. ### Key findings: - **Increased setback distance**: By increasing the distance between the doping layer and the 2DEG, the 5/2 energy gap is significantly increased, for example, from 0.25 to 0.84. - **Reduced background impurities**: Reducing the substrate temperature and the Al component reduces the introduction of background impurities and improves the electron mobility and the 5/2 energy gap. - **QW doping is superior to DX doping**: The QW doping scheme shows a higher 5/2 energy gap without illumination treatment. ### Conclusion: By optimizing the MBE growth parameters, especially increasing the setback distance, reducing background impurities and adopting the QW doping scheme, a relatively high 5/2 energy gap can be achieved in "native" samples. These optimization measures not only improve the quality of the 2DEG, but also provide an important reference for the future preparation of high - quality 2DEG structures suitable for topological quantum computing. ### Formula summary: - **Coulomb energy**: \( E_{\text{Coul}}=\frac{e^{2}}{4\pi\epsilon l_{B}} \), where \( \epsilon = 12.9 \) is the dielectric constant of GaAs, and \( l_{B}=\sqrt{\frac{\hbar c}{eB}} \) is the magnetic length. - **Activation energy**: \( \Delta \) can be determined by temperature - dependent measurements, and the formula is \( R_{xx}\propto\exp(-\Delta/2k_{B}T) \). These research results provide important theoretical and technical support for future semiconductor device design and quantum computing applications.

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