Abstract:Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($\nu$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute GaAs 2D electron systems (2DESs), strong evidence was reported for FQHSs at $\nu=1/7, 2/13$ and 2/11 which fall in the $\nu = p/(6p\pm1)$ Jain series of FQHSs, interpreted as integer ($p = 1$, 2) QHSs of 6-flux composite fermions ($^6$CFs). These states are surrounded by strongly-insulating phases which are generally believed to be Wigner crystals. Here, we study an ultra-high-quality 2DES confined to an AlAs quantum well where the 2D electrons have a much larger effective mass ($m^*\simeq 0.45 m_e$) and a smaller dielectric constant ($\epsilon\simeq10\epsilon_0$) compared to GaAs 2D electrons ($m^*\simeq 0.067 m_e$ and $\epsilon\simeq13\epsilon_0$). This combination of $m^*$ and $\epsilon$ renders the Landau level mixing parameter $\kappa$, defined as the ratio of the Coulomb and cyclotron energies, $\simeq 9$ times larger in AlAs 2DESs ($\kappa\propto m^*/\epsilon$). Qualitatively similar to the GaAs 2DESs, we observe an insulating behavior reentrant around a strong $\nu=1/5$ FQHS, and extending to $\nu<1/5$. Additionally, we observe a clear minimum in magnetoresistance at $\nu=2/11$, and an inflection point at $\nu=1/7$ which is very reminiscent of the first report of an emerging FQHS at $\nu=1/7$ in GaAs 2DESs. The data provide evidence for developing QHSs of $^6$CFs at very small fillings. This is very surprising because $\kappa$ near $\nu \simeq 1/6$ in our sample is very large ($\simeq4$), and larger $\kappa$ has the tendency to favor Wigner crystal states over FQHSs at small fillings. Our data should inspire calculations that accurately incorporate $\kappa$ in competing many-body phases of $^6$CFs at extremely small fillings near $\nu=1/6$.

Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE

Fractional Quantum Hall Effect at Ν = 5/2: Ground States, Non-Abelian Quasiholes, and Edge Modes in a Microscopic Model

Nu = 5/2 Fractional Quantum Hall Effect at 10 T: Implications for the Pfaffian State.

Filling factor dependence of the fractional quantum Hall effect gap

Developing fractional quantum Hall states at $ν$ = $\dfrac{1}{7}$ and $\dfrac{2}{11}$ in the presence of significant Landau level mixing

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Significant Internal Quantum Efficiency Enhancement of GaN/AlGaN Multiple Quantum Wells Emitting at ~350 Nm Via Step Quantum Well Structure Design

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Energy gap of the even-denominator fractional quantum Hall state in bilayer graphene

Enhancement of the Ν = 5/2 Fractional Quantum Hall State in a Small In-Plane Magnetic Field.

Robustness of the quantum Hall effect, sample size versus sample topology, and quality control management of III-V molecular beam epitaxy

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures