Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Carrier type modulation in current annealed graphene layers

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction

Carrier density modulation in graphene underneath Ni electrode

Widely tunable carrier mobility of boron nitride-embedded graphene.

Accessing The Transport Properties Of Graphene And Its Multilayers At High Carrier Density

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

Gate tunable non-linear currents in bilayer graphene diodes

Ferroelectrically driven spatial carrier density modulation in graphene

Direct Extraction of Carrier Mobility in Graphene Field-Effect Transistor Using Current-Voltage and Capacitance-Voltage Measurements

Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

Electrical Transport in High Quality Graphene Pnp Junctions

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Carrier Sheet Density Constrained Anomalous Current Saturation of Graphene Field Effect Transistors: Kinks and Negative Differential Resistances.

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Structural modulation of bilayer graphene under an external electric field and carrier doping

Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate

Carrier-induced Spin Switching in Co/Graphene/Ni: A First Principles Study