Abstract:The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to its peculiar polarization properties and to its angular distribution, diffusively reflected light allows a strong contrast enhancement to be achieved through the implementation of suitable illumination-detection schemes. We validate this conclusion by carrying out a detailed quantitative analysis of optical contrast, which fully reproduces our experimental observations on over 60 WSe$_2$ mono-, bi-, and trilayers. We further validate the proposed strategy by extending our analysis to atomically thin phosphorene, InSe, and graphene crystals. Our conclusion is that the use of diffusively reflected light to detect and identify atomically thin layers is an interesting alternative to the common detection scheme based on Fabry-Perot interference, because it enables atomically thin layers to be detected on substrates others than the commonly used Si/SiO$_2$, and it may offer higher sensitivity depending on the specific 2D material considered.

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Atomically Thin TaSe 2 Film as a High‐Performance Substrate for Surface‐Enhanced Raman Scattering

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe 2

Identifying atomically thin crystals with diffusively reflected light

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Toward Exploring the Structure of Monolayer to Few-layer TaS by Efficient Ultrasound-free Exfoliation.

Toward Exploring the Structure of Monolayer to Few-layer TaS 2 by Efficient Ultrasound-free Exfoliation

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Layer-dependent Raman spectroscopy of ultrathin

Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

Thickness and Stacking Sequence Determination of Exfoliated Dichalcogenides (1T-Tas2, 2H-Mos2) Using Scanning Transmission Electron Microscopy

Ultrafast optical melting of trimer superstructure in layered 1T'-TaTe2

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

Optical identification of atomically thin dichalcogenide crystals

Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy.

Controllable Synthesis of Atomically Thin 1t‐snse2 Flakes and Its Linear Second Harmonic Generation with Layer Thickness

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils