Abstract:Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe 2

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering

Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$

Identification of soft modes across the commensurate-to-incommensurate charge density wave transition in 1$T$-TaSe$_2$

Persistent Charge-Density-Wave Order in Single-Layer TaSe2.

Competition of disorder and electron-phonon coupling in 2H-TaSe$_{2-x}$S$_x$ ($0\le x\le 2$) as evidenced by Raman spectroscopy

Molecular interactions induced collapse of charge density wave quantum states in 2H tantalum disulfide nanosheets

Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers.

Tip-enhanced Raman scattering and near-field optical imaging of semiconducting monolayer and few-layer MoTe 2

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils

Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe₂ , TaS₂ , and TaSe₂.

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Layer-dependent Raman spectroscopy of ultrathin

Symmetry breaking and structure instability in ultra-thin 2H-TaS2 across charge density wave transition

Darkness in interlayer and charge density wave states of 2H-TaS2

Scanning Tunneling Spectroscopic Study of Monolayer 1T-Tas2 and 1T-Tase2

Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films

Probing enhanced superconductivity in van der Waals polytypes of V$_x$TaS$_2$

Chemical Vapor Deposition Grown Wafer-Scale 2d Tantalum Diselenide With Robust Charge-Density-Wave Order