CsPb3Bi3Te8 and CsPb4Bi3Te9: low-dimensional compounds and the homologous series CsPbmBi3Te5 + m

Kuei-Fang Hsu,Sangeeta Lal,Tim Hogan,Mercouri G Kanatzidis

DOI: https://doi.org/10.1039/b202043b

2002-07-07

Abstract:Two new thermoelectric materials of quaternary bismuth telluride CsPb3Bi3Te8 and CsPb4Bi3Te9 are reported, which are members of a homologous series featuring anionic slabs [PbmBi3Te5 + m]- (m = 1-4) of monotonically increasing thickness.

What problem does this paper attempt to address?

Pb m Bi 2 S 3+ m Homologous Series with Low Thermal Conductivity Prepared by the Solution-Based Method as Promising Thermoelectric Materials

Fanggong Cai,Rong Dong,Wei Sun,Xiaobo Lei,Bo Yu,Jun Chen,Le Yuan,Chao Wang,Qinyong Zhang

DOI: https://doi.org/10.1021/acs.chemmater.1c01387

IF: 10.508

2021-07-28

Chemistry of Materials

Abstract:Homologous compounds with complex crystal structures are considered as a new class of potential thermoelectric materials due to the possible low thermal conductivity. The thermoelectric properties of PbmBi2S3+m (m = 0, 1, and 3) homologous series are investigated in the temperature range of 300–800 K. The samples are prepared by a solution-based method assisted with EDTA-2Na in aqueous media, followed by sintering at 973 K. All obtained PbmBi2S3+m show an N-type degenerate semiconducting behavior, providing thermoelectric power factors, PF, of 3.7 μW·cm–1·K–2 for PbBi2S4 and 2.5 μW·cm–1·K–2 for Pb3Bi2S6 at 800 K. Meanwhile, very low thermal conductivities, κtotal, ranging from 0.55 to 0.65 and 0.93 to 1.17 W·m–1·K–1 are achieved at 300–800 K for PbBi2S4 and Pb3Bi2S6, respectively. Significantly, both PbBi2S4 and Pb3Bi2S6 reveal extremely low lattice thermal conductivities, κLat, of less than 0.46 and 0.79 W·m–1·K–1 over the entire temperature range, respectively. As a result, the highest thermoelectric figure of merit zT of 0.46 at 800 K is observed in PbBi2S4 due to a higher power factor and lower thermal conductivity compared with Pb3Bi2S6.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c01387.Projected density of states (PDOS) of Bi for Bi2S3, PbBi2S4, and Pb3Bi2S6; FESEM images of PbBi2S4 and Pb3Bi2S6 powders after sintering at 973 K; thermogravimetry (TG) and differential scanning calorimetry (DSC) curves of the Pb3Bi2S6 bulk after hot pressing (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Pb_{5}Bi_{24}Se_{41}: A New Member of the Homologous Series Forming Topological Insulator Heterostructures

Kouji Segawa,A. A. Taskin,Yoichi Ando

DOI: https://doi.org/10.1016/j.jssc.2014.09.034

2014-11-20

Abstract:We have synthesized Pb_{5}Bi_{24}Se_{41}, which is a new member of the (PbSe)_{5}(Bi2Se3)_{3m} homologous series with m = 4. This series of compounds consist of alternating layers of the topological insulator Bi2Se3 and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb_{5}Bi_{24}Se_{41} expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of the topological states in the out-of-plane transport.

Materials Science,Mesoscale and Nanoscale Physics
Bismuth telluride compounds with high thermoelectric figures of merit

Osamu Yamashita,Shoichi Tomiyoshi,Ken Makita

DOI: https://doi.org/10.1063/1.1525400

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:The thermoelectric properties of the p-type (Bi0.25Sb0.75)2Te3 doped with 8 wt. % excess Te and the n-type Bi2(Te0.94Se0.06)3 doped substantially with 0.07 wt. % I, 0.02 wt. % Te, and 0.03 wt. % CuBr which were grown by the Bridgman method at a rate of 6 cm/h were measured before and after annealing, where annealing was done in the temperature range from 473 up to 673 K for 2–5 h in a vacuum and a hydrogen stream. No annealing effect on the power factor was observed for the p-type specimen, but the as-grown p-type specimen exhibited a large power factor of 5.53×10−3 W/mK2 at 308 K and a low thermal conductivity of 1.21 W/mK. When the n-type specimen was annealed at 473 K for 2 h in a hydrogen stream, however, the power factor at 308 K increased significantly from 3.26×10−3 to 4.73×10−3 K−1 but its thermal conductivity then increased by about 3% from 1.26 to 1.30 W/mK. As a result, the maximum thermoelectric figure of merits Z at 308 K for the as-grown p- and annealed n-type specimens reached surprisingly great values of 4.57×10−3 K−1 and 3.67×10−3 K−1, respectively, with corresponding ZT values of 1.41 and 1.13. The present materials are sure to belong to the highest class in the Z and ZT values as bismuth telluride bulk compounds.

physics, applied
Modular construction of A1+xM4-2xM'7+xSe15 (A = K, Rb; M = Pb, Sn; M' = Bi, Sb) : A new class of solid state quaternary thermoelectric compounds

Kyoung-Shin Choi,Duck Young Chung,Antje Mrotzek,Paul Brazis,Carl R. Kannewurf,Ctirad Uher,Wei Chen,Timothy P. Hogan,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/cm0003323

IF: 10.508

2001-01-01

Chemistry of Materials

Abstract:Five isostructural compounds, K1.25Pb3.5Bi7.25Se15 (I), K1.46Sn3.09Bi7.45Se15 (II), Rb1.45Pb3.1Sb7.45Se15 (III), K1.45Pb3.1Sb7.45Se15 (IV), and K2.15Pb1.7Sb8.15Se15 (V) were prepared by the molten flux method as silver rodlike air-stable crystals. They all crystallize in the monoclinic space group P21/m with a = 17.4481(8) A, b = 4.1964(2) A, c = 21.695(1) A, β = 98.850(1)° for I, a = 17.454(5) A, b = 4.201(1) A, c = 21.760(6) A, β = 98.550(5)° for II, a = 17.3160(7) A, b = 4.1406(2) A, c = 21.6401(8) A, β = 99.139(1)° for III, a = 17.1204(6) A, b = 4.1568(2) A, c = 21.6362(8) A, β = 98.706(1)° for IV, and a = 17.167(4) A, b = 4.1494(9) A, c = 21.684(5) A, β = 98.664(3)° for V (Z = 2 for all compounds). The general formula A1+xM4-2xM‘7+xSe15 (A = K, Rb; M = Pb, Sn; M‘ = Bi, Sb) is derived from a large degree of variability in composition that is expressed in terms of mixed occupancy among A+, M2+, and M‘3+ atoms. The structure type has a three-dimensional framework assembled from NaCl- and Bi2Te3-type mod...
Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Shuahua Cao,Huayun Geng,Cui-E. Hu,Tian Zhang,Xiangshan Chen

DOI: https://doi.org/10.1039/d2cp03708d

2022-10-31

Abstract:Bismuth telluride (Bi2Te3) and its derivatives are often focused on as thermoelectric materials around room temperature. In this work, we theoretically predicted two new types of Bi2Te3-based two-dimensional materials Bi2SSe2 and Bi2S2Se using density functional theory (DFT) combined with Boltzmann transport theory. The thermal, dynamic, and mechanical stabilities of Bi2SSe2 and Bi2S2Se monolayers are confirmed using ab initio molecular dynamics (AIMD) simulations, phonon dispersion, and elastic constant calculations. The phonon transport properties, including lattice thermal conductivity, group velocity, Grüneisen parameter, converged scattering rate, and phonon lifetimes contributed by different branches, are systematically investigated. The electronic and thermoelectric properties, including carrier mobility (μ), Seebeck coefficient (S), electrical conductivity (σ), power factors, and figure of merit (zT) along the zigzag and armchair directions as a function of carrier concentration at different temperatures, are also investigated. It is found that the Bi2SSe2 and Bi2S2Se monolayers have moderate indirect band gaps (0.92 eV and 1.08 eV at the PBE level, respectively) and low lattice thermal conductivities (4.35 and 5.37 W m-1 K-1 at 300 K, respectively). The largest zT values of Bi2SSe2 and Bi2S2Se monolayers are 0.50 and 0.28 at 300 K and 1.39 and 0.93 at 700 K for p-doping types, respectively. The Bi2SSe2 and Bi2S2Se monolayers are predicted to show high optical absorption peaks at 8 × 105 cm-1 in the visible and near-UV light region, respectively. Our results indicate that both Bi2SSe2 and Bi2S2Se could be promising candidates in energy conversion, solar cells, and optoelectronic devices.

Medicine,Materials Science,Physics
Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

S K Mishra,S Satpathy,O Jepsen

DOI: https://doi.org/10.1088/0953-8984/9/2/014

1997-01-13

Abstract:The electronic structures of the two thermoelectric materials and are studied using density-functional theory with the spin - orbit interaction included. The electron states in the gap region and the chemical bonding can be described in terms of interaction between the atomic p orbitals within the `quintuple' layer. For , we find both the valence-band maximum as well as the conduction-band minimum, each with a nearly isotropic effective mass, to occur at the zone centre in agreement with experimental results. For , we find that the six valleys for the valence-band maximum are located in the mirror planes of the Brillouin zone and they have a highly anisotropic effective mass, leading to an agreement between the de Haas - van Alphen data for the p-doped samples and the calculated Fermi surface. The calculated conduction band, however, has only two minima, instead of the six minima indicated from earlier experiments. The calculated Seebeck coefficients for both p-type and n-type materials are in agreement with the experiments.
The New Thermoelectric Semiconductors Pb5Sb12+xBi6−xSe32 with Ultralow Thermal Conductivity

Ruizhi Yang,Xia Li,Weiping Guo,Zixuan Chen,Hongwei Ming,Zhong-Zhen Luo,Zhigang Zou

DOI: https://doi.org/10.1016/j.cjsc.2024.100268

IF: 0.847

2024-01-01

Chinese journal of structural chemistry

Abstract:The five new semiconductors Pb5Sb12+xBi6−xSe32 (x = 0, 1, 2, 3, and 4) were synthesized for the first time, which adopted the pavonite-type structure and crystallized in the monoclinic space group C2/m. The crystal structure was composed of two different types of polyhedral slabs. Slab-I is a galena-like structure motif that forms with [MSe6] (M = Pb, Sb, and Bi) octahedra. Slab-II contains one octahedron [MSe6] block and paired squared pyramids [MSe5]. Pb5Sb12+xBi6−xSe32 exhibits n-type semiconductor behaviors and the remarkable Seebeck coefficient from −64.1 μV K−1 for x = 0 sample to −242 μV K−1 for x = 4 sample at 300 K. Moreover, the Pb5Sb12Bi6Se32 has the highest carrier concentration of 1.35 × 1020 cm−3 in pavonite-type materials. The complex compositions, mixed occupancies of the cations, and quasi-two-dimensional structure lead to the low lattice thermal conductivity (κlat) of less than 0.48 W m−1 K−1 from 300 K to 723 K. In especial, Pb5Sb16Bi2Se32 shows the ultralow κlat of 0.25 W m−1 K−1 at 723 K. As a result, the thermoelectric figure of merit, ZT ∼0.34 at 723 K, was obtained for the intrinsic Pb5Sb12Bi6Se32.
CuPbBi5S9 thermoelectric material with an intrinsic low thermal conductivity: Synthesis and properties

Hao Liang,Jun Guo,Yun-Xuan Zhou,Zi-Yuan Wang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1016/j.jmat.2021.03.016

IF: 8.589

2022-01-01

Journal of Materiomics

Abstract:CuPbBi5S9 compounds have been investigated as gladite for years. However, there have been no significant studies on their physical and chemical properties. This work demonstrates that upon alloying with moderate Cu, Pb, Bi, and S using an appropriate preparation method, quaternary CuPbBi5S9 compounds can exhibit excellent figure of merit ZT within the temperature range 298-723 K. A low average velocity, low Young's modulus and Debye temperature, and large Gruneisen parameter, determined experimentally, indicate strong lattice anharmonicity in CuPbBi5S9 crystals. Furthermore, density functional theory calculations (local vibration of low-frequency acoustic phonons) justify the low lattice thermal conductivity of CuPbBi5S9 compounds. Because of the low thermal conductivity (0.514 W m(-1)K(-1)) and a relatively high power factor (293 mW m(-1)K(-2)), a maximum ZT of 0.42 was achieved at 723 K for CuPbBi5S9 prepared by mechanical alloying combined with solid-state melting. Thus, CuPbBi5S9 materials are promising candidates for use as high-performance thermoelectric materials in the intermediate-temperature range. (C) 2021 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
2D Homologous Series SrFMnBiSn+2 (M = Pb, Ag0.5Bi0.5; N = 0, 1) and Commensurately Modulated Sr2F2Bi2/3S2.

Haijie Chen,Rebecca McClain,Jiahong Shen,Jiangang He,Christos D. Malliakas,Ioannis Spanopoulos,Chi Zhang,Chendong Zhao,Yang Wang,Qiang Li,Duck Young Chung,Xianli Su,Fuqiang Huang,Wai-Kwong Kwok,Christopher Wolverton,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/acs.inorgchem.2c00663

IF: 4.6

2022-01-01

Inorganic Chemistry

Abstract:We report three new mixed-anion two-dimensional (2D) compounds: SrFPbBiS3, SrFAg0.5Bi1.5S3, and Sr2F2Bi2/3S2. Their structures as well as the parent compound SrFBiS2 were refined using single-crystal X-ray diffraction data, with the sequence of SrFBiS2, SrFPbBiS3, and SrFAg0.5Bi1.5S3 defining the new homologous series SrFMnBiSn+2 (M = Pb, Ag0.5Bi0.5; n = 0, 1). Sr2F2Bi2/3S2 has a different structure, which is modulated with a q vector of 1/3b* and was refined in superspace group X2/m(0β0)00 as well as in the 1 × 3 × 1 superstructure with space group C2/m (with similar results). Sr2F2Bi2/3S2 features hexagonal layers of alternating [Sr2F2]2+ and [Bi2/3S2]2-, and the modulated structure arises from the unique ordering pattern of Sr2+ cations. SrFPbBiS3, SrFAg0.5Bi1.5S3, and Sr2F2Bi2/3S2 are semiconductors with band gaps of 1.31, 1.21, and 1.85 eV, respectively. The latter compound exhibits room temperature red photoluminescence at ∼700 nm.
Room Temperature High Thermoelectric Performance of Bi-based Full-Heusler Compounds CsxRb3-xBi with Strong Anharmonicity

Shuming Zeng,Qian Shen,Lei Fang,Zonglin Gu,Jinpeng Yang,Geng Li,Yusong Tu,Jun Ni

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2023.124628

2023-01-01

Abstract:Bismuth-based compounds have been identified as a class of promising candidates for the realization of high-performance thermoelectrics, derived from their exceptional electrical conductivity and intrinsic low lattice thermal conductivity κL. Here, we employed first-principles calculations, self-consistent phonon theory, and compressive sensing technique in conjunction with the Boltzmann transport equation to investigate the anharmonic thermoelectric properties of full-heusler bismuth compounds CsxRb3−xBi. As the Cs content increases, the κL of CsxRb3−xBi decreases due to impurity scattering effects, and then increases. Among them, at 300 K, Rb3Bi has the largest κL of 0.69 Wm−1K−1, while Cs2RbBi has the smallest κL of 0.45 Wm−1K−1, both of which are lower than the κL of traditional bismuth-based thermoelectric materials. The ultralow κL originates from the strong lattice anharmonicity. In addition, the coexistence of high dispersion and flat band edges leads to high thermoelectric power factor at optimal doping concentration. As a result, the largest thermoelectric figure of merit ZT values of 2.59 (4.19) at 300 (500) K were obtained for CsRb2Bi at optimal hole doping level. These findings suggest that CsxRb3−xBi compounds are superior for thermal management and thermoelectric applications.
Thermoelectric Properties of New Zintl Phases: Ba/sub 4/in/sub 8/sb/sub 16/ and Ba/sub 6/ge/sub 25-X/

Sung-Jin Kim,Chen, Wei,Uher, Ctirad,Kanatzidis, Mercouri G.

DOI: https://doi.org/10.1109/ict.1999.843359

1999-01-01

Abstract:A new compound Ba/sub 4/In/sub 8/Sb/sub 16/ is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a=10.166(3) /spl Aring/, b=4.5239(14) /spl Aring/, c=19.495(6) /spl Aring/, and Z=1. Ba/sub 4/In/sub 8/Sb/sub 16/ has a 2-dimensional structure with thick corrugated (In/sub 8/Sb/sub 16/)/sup 8$/layers separated by Ba ions. The compound is a narrow band-gap (/spl sim/0.10 eV) semiconductor. Polycrystalline ingots of Ba/sub 4/In/sub 8/Sb/sub 16/ show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 /spl mu/V/K. The thermal conductivity of Ba/sub 4/Ln/sub 8/Sb/sub 16/ is about 1.7 W/m/spl middot/K in the temperature range of 150-300 K. The new compound Ba/sub 6/Ge/sub 25-x/ was also examined. Ba/sub 6/Ge/sub 25-x/ adopts chiral clathrate structure with cubic space group P4/sub 1/32 and dimension of a=14.5483(2) /spl Aring/. Ba/sub 6/Ge/sub 25-x/ shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 /spl mu/V/K. The thermal conductivity was about 2.5 W/m/spl middot/K at room temperature. Both of the compounds reported here are air and moisture stable.
Planar Zintl-phase high-temperature thermoelectric materials XCuSb (X = Ca, Sr, Ba) with low lattice thermal conductivity

Sikang Zheng,Kunling Peng,Shijuan Xiao,Zizhen Zhou,Xu Lu,Guang Han,Bin Zhang,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1007/s40145-022-0634-y

IF: 11.534

2022-09-17

Journal of Advanced Ceramics

Abstract:A recent discovery of high-performance Mg 3 Sb 2 has ignited tremendous research activities in searching for novel Zintl-phase compounds as promising thermoelectric materials. Herein, a series of planar Zintl-phase XCuSb (X = Ca, Sr, Ba) thermoelectric materials are developed by vacuum induction melting. All these compounds exhibit high carrier mobilities and intrinsic low lattice thermal conductivities (below 1 W·m −1 ·K −1 at 1010 K), resulting in peak p-type zT values of 0.14, 0.30, and 0.48 for CaCuSb, SrCuSb, and BaCuSb, respectively. By using BaCuSb as a prototypical example, the origins of low lattice thermal conductivity are attributed to the strong interlayer vibrational anharmonicity of Cu—Sb honeycomb sublattice. Moreover, the first-principles calculations reveal that n-type BaCuSb can achieve superior thermoelectric performance with the peak zT beyond 1.1 because of larger conducting band degeneracy. This work sheds light on the high-temperature thermoelectric potential of planar Zintl compounds, thereby stimulating intense interest in the investigation of this unexplored material family for higher zT values.

materials science, ceramics
2D Homologous Series SrFM n BiS n +2 (M = Pb, Ag 0.5 Bi 0.5 ; n = 0, 1) and Commensurately Modulated Sr 2 F 2 Bi 2/3 S 2

Haijie Chen,Rebecca McClain,Jiahong Shen,Jiangang He,Christos D. Malliakas,Ioannis Spanopoulos,Chi Zhang,Chendong Zhao,Yang Wang,Qiang Li,Duck Young Chung,Xianli Su,Fuqiang Huang,Wai-Kwong Kwok,Christopher Wolverton,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1021/acs.inorgchem.2c00663

IF: 4.6

2022-05-17

Inorganic Chemistry

Abstract:We report three new mixed-anion two-dimensional (2D) compounds: SrFPbBiS3, SrFAg0.5Bi1.5S3, and Sr2F2Bi2/3S2. Their structures as well as the parent compound SrFBiS2 were refined using single-crystal X-ray diffraction data, with the sequence of SrFBiS2, SrFPbBiS3, and SrFAg0.5Bi1.5S3 defining the new homologous series SrFMnBiSn+2 (M = Pb, Ag0.5Bi0.5; n = 0, 1). Sr2F2Bi2/3S2 has a different structure, which is modulated with a q vector of 1/3b* and was refined in superspace group X2/m(0β0)00 as well as in the 1 × 3 × 1 superstructure with space group C2/m (with similar results). Sr2F2Bi2/3S2 features hexagonal layers of alternating [Sr2F2]2+ and [Bi2/3S2]2-, and the modulated structure arises from the unique ordering pattern of Sr2+ cations. SrFPbBiS3, SrFAg0.5Bi1.5S3, and Sr2F2Bi2/3S2 are semiconductors with band gaps of 1.31, 1.21, and 1.85 eV, respectively. The latter compound exhibits room temperature red photoluminescence at ∼700 nm.

chemistry, inorganic & nuclear
A(2)Bi(8)Se(13) (A = Rb, Cs), Csbi3.67se6, and Babi2se4: New Ternary Semiconducting Bismuth Selenides

L Iordanidis,PW Brazis,T Kyratsi,J Ireland,M Lane,CR Kannewurf,W Chen,JS Dyck,C Uher,NA Ghelani,T Hogan,MG Kanatzidis

DOI: https://doi.org/10.1021/cm000734a

IF: 10.508

2001-01-01

Chemistry of Materials

Abstract:Rb2Bi8Se13 (I), Cs2Bi8Se13 (II), CsBi3.67Se6 (III), and BaBi2Se4 (IV) were synthesized by direct combination reactions of the A/Se (A = Rb, Cs, Ba) and Bi2Se3 at greater than or equal to 650 degreesC. Their structures were determined by single-crystal X-ray diffraction. Rb2Bi8Se13 and Cs2Bi8Se13 are isostructural and crystallize in the monoclinic space group P2(1)/m (No. 11) with a 13.4931(4) Angstrom, b = 4.1558(3) Angstrom, c 24.876(2) Angstrom, beta = 96.571(4)degrees, R1 = 0.0577, and wR2 = 0.1159 [I > 2 sigma (I)] for I and a = 13.704(1) Angstrom, b = 4.1532(4) Angstrom, c = 25.008(2) Angstrom, beta = 96.848(2)degrees, R1 = 0.0497, and wR2 = 0.1123 [I > 2 sigma (I)] for II. CsBi3.67Se6 crystallizes in the orthorhombic space group Pnma (No. 62) with a = 23.421(4) Angstrom, b = 4.1877(8) Angstrom, c 13.710(3) Angstrom, R1 = 0.061.1, and wR2 = 0.1384 [I > 2 sigma (I)]. BaBi2Se4 crystallizes in the hexagonal space group P6(3)/m (No. 176) with a = 26.157(1) Angstrom, c = 4.3245(3) Angstrom, R1 = 0.0371, and wR2 = 0.0817 [I > 2 sigma (I)]. The structure of A(2)Bi(8)Se(13) features a three-dimensional framework consisting of wide rectangular NaC1-type infinite rods, running parallel to the b-axis, which are stitched together by CdI2- and Sb2Se3-type fragments. The NaC1-type blocks are aligned parallel to each other, and between them are rows of alkali metal ions. CsBi3.67Se6 consists Of narrower NaC1-type infinite rods, which share edges. The cesium metal ions reside in the space between these rods. The bismuth sites that connect the NaC1-type rods are partially occupied. The [Bi2Se4](2-) framework in BaBi2Se4 contains tunnels running along the c-axis that are occupied by Ba atoms. All compounds are narrow band-gap semiconductors. Electrical conductivity and thermoelectric power measurements show that I-TV exhibit n-type charge transport. Compounds I and II, however, can also exhibit p-type behavior. The thermal conductivity for I and TV is low with room-temperature values of similar to1.6 W/(m .K) for I and similar to1.2 W/(m .K) for TV. The optical band gaps of all compounds range between 0.3 and 0.6 eV.
A Ba6Cu31Te22 (A = K, Rb, Cs) Featuring Polyanionic Copper-Telluride Frameworks with Ultralow Thermal Conductivity

Arka Sarkar,Frank T Cerasoli,Gayatri Viswanathan,Davide Donadio,Kirill Kovnir

DOI: https://doi.org/10.1021/acsami.4c06694

2024-07-31

Abstract:Three polyanionic tellurides, ABa6Cu31Te22 (A = K, Rb, Cs), were synthesized in salt flux. The isostructural tellurides crystallize in a new structure type, in the cubic Pa3 space group with a Wyckoff sequence of d10c2b1 and large unit cell volumes of over 5500 Å3. The structures feature a framework of [CuTe4] tetrahedra and [CuTe3] trigonal pyramids with disorder in the Cu sites. The polyanionic frameworks have large square antiprism and cuboctahedral voids where Ba and alkali metal cations are situated, forming [BaTe8] and [ATe12], respectively. The overall compositions are close to being charge balanced. The large [ATe12] cuboctahedra allowed for significant anisotropic displacement of the A cations, as observed from both single crystal X-ray diffraction and heat capacity studies. Alkali cations rattling together with Cu atom displacement and disorder leads to the dispersion of phonons, thus softening the lattice and subsequently reducing the thermal conductivity. Evaluations of the electronic band structure revealed the occurrence of a narrow bandgap together with the presence of a flat band near the valence band maximum, giving rise to the high thermopower. The Cs and Rb analogues show a slope change in the temperature dependence of electrical resistivity around room temperature, which is typical for semimetals or degenerate semiconductors. For the as-synthesized and unoptimized materials, high values of the thermoelectric figure-of-merit of ∼0.2 were observed at 623 K.
Anisotropic Thermoelectric Materials: Pentagonal PtM 2 (M = S, Se, Te)

Wang-Li Tao,Ying-Qin Zhao,Zhao-Yi Zeng,Xiang-Rong Chen,Hua-Yun Geng

DOI: https://doi.org/10.1021/acsami.0c19460

2021-02-08

Abstract:We here report a new pentagonal network structure of the PtM2 (M = S, Se, Te) monolayers with the P21/c (no. 14) space group. The electronic structure and thermoelectric properties of the pentagonal PtM2 monolayers are calculated through the VASP and BoltzTraP codes. We verify their dynamic and thermodynamic stabilities by calculating their phonon spectra and simulating ab initio molecular dynamics. It is found that the new material belongs to the medium-wide indirect band gap semiconductors from the PBE and HSE06 methods. At 300 K, the lattice thermal conductivities (Kl) of the pentagonal PtTe2 in the x and y directions are the smallest among these three materials, being 1.77 and 5.17 W/m K, respectively. The anisotropic zT values (2.60/1.14) in the x/y direction of the pentagonal PtTe2 at 300 K are much greater than those of the pentagonal PtSe2 (1.75/0.82) and the pentagonal PtS2 (0.58/0.16) at 300 K. Importantly, the p-type pentagonal PtTe2 also has excellent thermoelectric properties at 600 K, with a zT value of 5.03 in the x direction, indicating that the p-type pentagonal PtTe2 has a good application potential in the thermoelectric field.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c19460?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c19460</a>.ELF diagram, AIMD at 600 K, electronic band structures by the HSE06 functional, thermoelectric parameters, relaxation time parameters, and thermoelectric zT of the n-type pentagonal PtM2 (M = S, Se, Te) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c19460/suppl_file/am0c19460_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Electronic Structure of a Thermoelectric Material: BiCuSO

D. Pei,Y-Y Lv,Y. Y. Y. Xia,Y. W. Li,J. Y. Liu,N. B. M. Schroter,C. Cacho,Z. K. Liu,L. X. Yang,G. Li,Y. B. Chen,Y. L. Chen

DOI: https://doi.org/10.1103/physrevb.103.245121

IF: 3.7

2021-01-01

Physical Review B

Abstract:We investigate transport properties and the electronic structure of BiCuSO, a thermoelectric material which was predicted as a possible parent compound for unconventional superconductivity. For the p-type BiCuSO samples studied in this paper, our transport measurements show metallic behavior down to 2 K, and we observe an increase of saturated magnetic moment around 4 K, which could be due to the reorientation of the magnetic easy axis. Using angle-resolved photoemission spectroscopy measurements, we acquired the comprehensive electronic structure of BiCuSO including the predicted flat band, and by carrying out photon polarization dependent measurements we further investigated the orbital characters of bands near the Fermi level. Compared with its sister compound, BiCuSeO, we find the flat band could be the origin of high figure of merit (ZT) value in the BiCuChO (Ch = S, Se) family.
Thermoelectric Performance of Binary Lithium-Based Compounds: Li3Sb and Li3Bi

Kunling Peng,Zizhen Zhou,Honghui Wang,Hong Wu,Jianjun Ying,Guang Han,Xu Lu,Guoyu Wang,Xiaoyuan Zhou,Xianhui Chen

DOI: https://doi.org/10.1063/5.0056880

IF: 4

2021-01-01

Applied Physics Letters

Abstract:Thermoelectric transport properties of binary lithium-based compounds Li3Sb and Li3Bi are investigated. Although the present results show zTs (0.3 for Li3Sb and 0.06 for Li3Bi) are low for the p-type compounds in this family, the experimental data analysis based on the single parabolic band model assuming the dominance of acoustic phonon scattering for carriers suggests that both Li3Sb and Li3Bi process good electronic quality factor BE over 3, which gives rise to the predicted peak zT values above 0.7 and 1.2 at 800 K for Li3Sb and Li3Bi, respectively. In addition, the electronic band structure and phonon dispersion of Li3Sb are given by first principles calculation. This work offers insight into the crystal structure and transport properties of Li3Sb and Li3Bi, indicating the potential of binary lithium-based compounds as promising thermoelectrics.
Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties

Tian-Ran Wei,Ping Hu,Hongyi Chen,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen

DOI: https://doi.org/10.1063/1.5083863

IF: 4

2019-02-04

Applied Physics Letters

Abstract:Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-dimensional semiconductors in their stable trigonal phases with high electrical conductivity and low thermal conductivity, but their thermoelectric properties have not been systematically investigated. Here, in this letter, we prepared polycrystalline Ge2Sb2Te5, GeSb2Te4, and GeSb4Te7 bulk materials and studied the thermoelectric transport properties. Large anisotropy in Seebeck coefficient as well as in electrical conductivity is observed, which is not commonly reported in polycrystalline thermoelectric materials. Combining experimental study and theoretical calculations, one can find that this phenomenon is attributed to the asymmetry of a material's band structure. Maximal zT values of 0.46–0.60 are achieved at 750 K, indicating that GeSbTe-based compounds are promising thermoelectric materials for mid-temperature applications.

physics, applied
Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Hongyan Lv,Huijun Liu,Lu Pan,YanWei Wen,XiaoJian Tan,Jing Shi,Xinfeng Tang

DOI: https://doi.org/10.1063/1.3372636

IF: 4

2010-01-01

Applied Physics Letters

Abstract:The electronic properties of (Sb0.75Bi0.25)(2)Te-3 compound are examined by using the full-potential linearized augmented plane-wave method. The transport coefficients are then calculated within the semiclassical Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture and constant relaxation time. The ZT value is thus estimated by inserting an averaged thermal conductivity. Our theoretical calculations give a valuable insight on how to enhance the thermoelectric performance of this compound, and many potential doping elements and their optimal concentrations are suggested.

CsPb3Bi3Te8 and CsPb4Bi3Te9: low-dimensional compounds and the homologous series CsPbmBi3Te5 + m

Pb m Bi 2 S 3+ m Homologous Series with Low Thermal Conductivity Prepared by the Solution-Based Method as Promising Thermoelectric Materials

Pb_{5}Bi_{24}Se_{41}: A New Member of the Homologous Series Forming Topological Insulator Heterostructures

Bismuth telluride compounds with high thermoelectric figures of merit

Modular construction of A1+xM4-2xM'7+xSe15 (A = K, Rb; M = Pb, Sn; M' = Bi, Sb) : A new class of solid state quaternary thermoelectric compounds

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

The New Thermoelectric Semiconductors Pb5Sb12+xBi6−xSe32 with Ultralow Thermal Conductivity

CuPbBi<sub>5</sub>S<sub>9</sub> thermoelectric material with an intrinsic low thermal conductivity: Synthesis and properties

2D Homologous Series SrFMnBiSn+2 (M = Pb, Ag0.5Bi0.5; N = 0, 1) and Commensurately Modulated Sr2F2Bi2/3S2.

Room Temperature High Thermoelectric Performance of Bi-based Full-Heusler Compounds CsxRb3-xBi with Strong Anharmonicity

Thermoelectric Properties of New Zintl Phases: Ba/sub 4/in/sub 8/sb/sub 16/ and Ba/sub 6/ge/sub 25-X/

Planar Zintl-phase high-temperature thermoelectric materials XCuSb (X = Ca, Sr, Ba) with low lattice thermal conductivity

2D Homologous Series SrFM n BiS n +2 (M = Pb, Ag 0.5 Bi 0.5 ; n = 0, 1) and Commensurately Modulated Sr 2 F 2 Bi 2/3 S 2

A(2)Bi(8)Se(13) (A = Rb, Cs), Csbi3.67se6, and Babi2se4: New Ternary Semiconducting Bismuth Selenides

A Ba6Cu31Te22 (A = K, Rb, Cs) Featuring Polyanionic Copper-Telluride Frameworks with Ultralow Thermal Conductivity

Anisotropic Thermoelectric Materials: Pentagonal PtM 2 (M = S, Se, Te)

Electronic Structure of a Thermoelectric Material: BiCuSO

Thermoelectric Performance of Binary Lithium-Based Compounds: Li3Sb and Li3Bi

Quasi-two-dimensional GeSbTe compounds as promising thermoelectric materials with anisotropic transport properties

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations