Abstract:Optical second harmonic generation (SHG) has been measured for the first time in reflection from the nanometer-thick films (6 to 40 nm) of the topological insulator Bi2Se3 using 1.51 eV (820 nm) Ti:Sapphire laser photons and revealed a strong dependence of the integral SHG intensity on the film thickness. The integral SHG intensity was determined by area integration of the SHG rotational anisotropy patterns measured for different input-output light polarization geometries. A ~100-fold enhancement of the integral SHG intensity with decreasing film thickness has been suggested to result from the DC-electric-field-induced SHG (EFISHG) effects. Two sources of dynamically created DC electric field were proposed: (i) the capacitor-type DC electric field that gradually increases with decreasing film thickness from 40 to 6 nm due to a dynamical imbalance of photoexcited long-lived carriers between the opposite-surface Dirac surface states and (ii) an DC electric field associated with a nonlinearly excited Dirac plasmon, which is responsible for the resonant enhancement of the integral SHG intensity for the 10 nm thick film with a Lorentz-shaped resonance of ~1.6 nm full width at half maximum. Additionally to the general SHG enhancement trends with decreasing film thickness, a relative decrease of the out-of-plane contribution with respect to the in-plane contribution was observed. Using a theoretical treatment of the measured SHG rotational anisotropy patterns, this effect has been suggested to result from the joint contributions of the linear and quadratic DC electric field effects to the EFISHG response.

Local photocurrent generation in thin films of the topological insulator Bi2Se3

Photocurrent measurements in topological insulator $\text{Bi}_2\text{Se}_3$ nanowires

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Tuning Thermoelectricity in A Bi2se3 Topological Insulator Via Varied Film Thickness

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Helicity Dependent Photocurrent in Electrically Gated (bi1−x Sb X )2te3 Thin Films

Photogalvanic spectroscopy on MnBi2Te4 topological insulator thin films

Nanoscale mapping of edge-state conductivity and charge-trap activity in topological insulators

Emergence of Three-fold Symmetric Helical Photocurrents in Epitaxial Low Twinned Bi$_2$Se$_3$

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Control over topological insulator photocurrents with light polarization

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Topological Surface State Enhanced Photothermoelectric Effect in Bi2Se3 Nanoribbons

Photoelectric properties of Bi2Se3 films grown by thermal evaporation method

Resonance-type thickness dependence of optical second harmonic generation in thin-films of the topological insulator Bi2Se3

Electron interaction and localization in ultrathin topological insulator films