Local photocurrent generation in thin films of the topological insulator Bi2Se3

C. Kastl,T. Guan,X. Y. He,K. H. Wu,Y. Q. Li,A. W. Holleitner

DOI: https://doi.org/10.1063/1.4772547

2012-10-17

Abstract:We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitude. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper aims to solve the problem of the mechanism of local photocurrent generation in topological insulator (Bi₂Se₃) thin films. Specifically, the researchers experimentally explored the photoelectric properties of molecular - beam - epitaxy - grown Bi₂Se₃ thin films under light irradiation and attempted to understand the origin of the sub - micrometer - scale photocurrent patterns that appear in these films.

### Research Background

In recent years, a new type of solid material - topological insulator (TI) has attracted wide attention. These materials behave as ordinary insulators in the bulk phase, but there are gap - less states on the surface, showing unique properties such as helical Dirac dispersion and suppressed backscattering. The existence of these surface states has been theoretically predicted and experimentally verified. In particular, for three - dimensional topological insulators (such as Bi₂Se₃), although the carrier density in the bulk is relatively high, these surface states can be effectively detected by selectively exciting and measuring the photocurrent under circularly polarized light.

### Research Questions

This paper mainly discusses the following questions:
1. **Spatial distribution of photocurrent**: How is the photocurrent distributed in Bi₂Se₃ thin films under different conditions (such as temperature, voltage, laser intensity, etc.)? Why do sub - micrometer - scale photocurrent patterns with positive and negative amplitudes appear?
2. **Relationship between photocurrent and geometric structure**: What is the influence of device geometry (such as channel width) on the photocurrent?
3. **Underlying mechanism**: Is the generation of these photocurrent patterns related to local potential fluctuations?

### Experimental Methods

- **Sample preparation**: Bi₂Se₃ thin films with thicknesses of 10 nm and 20 nm were grown on SrTiO₃(111) substrates using molecular - beam - epitaxy technology, and the films were processed into 50 µm - wide Hall - bar devices by standard lithography and plasma etching techniques.
- **Measurement conditions**: All photocurrent measurements were carried out at a low temperature of about 30 - 40 K, using a scanning confocal laser microscope (wavelength 800 nm), with a laser power of about 10 µW and a light intensity of about kW/cm². The photocurrent without applied bias was measured by a lock - in amplifier.
- **Data analysis**: Photocurrent and reflected light intensity maps were recorded and analyzed, significant sub - micrometer - scale photocurrent fluctuations were observed, and the relationship between these fluctuations and device geometry was studied.

### Main Findings

1. **Global response of photocurrent**: The overall magnitude of the photocurrent only depends on the device geometry and the intensity of the excitation light, and is not affected by the applied bias.
2. **Sub - micrometer - scale photocurrent patterns**: Sub - micrometer - scale photocurrent patterns with positive and negative amplitudes were found, and these patterns can be continuously deformed by changing the back - gate voltage.
3. **Influence of potential fluctuations**: It is believed that these photocurrents are caused by local potential fluctuations in Bi₂Se₃ thin films, resulting in the separation of photogenerated electrons and holes and the formation of local photocurrents.

### Conclusion

The research shows that the photocurrent in Bi₂Se₃ thin films is caused by the separation of photogenerated carriers due to local potential fluctuations. This finding is helpful for understanding the electron transport characteristics in topological insulators and may provide new ideas for the design of optoelectronic devices based on topological insulators.