Abstract:Resonance Raman spectroscopy was performed for the investigation of Bi2‐xSbxTe3‐ySey and Bi2Te3 films. At 300 K, Ag and Eg modes became broader, and the wavenumber shifted to a lower value; the intensity of the mode was dampened due to anharmonic coupling. At near resonance, the intensity of the LO mode was enhanced due to the interband electronic transition. Phonon occupation is temperature (T) dependent; it may participate in scattering with electronic states of topological insulators (TIs). Longitudinal optical (LO) phonons A1g1 and A1g2 in Bi2 − xSbxTe3 − ySey (BSTS) was resonantly excited by a photon energy (Ep) 2.33 eV due to electronic transition of unoccupied conduction band. The intensity of these modes was enhanced in Bi2Te3 film at Ep 1.87 eV, which is close to the electronic transition of unoccupied Dirac states. Fröhlich coupling strength was the main mechanism for higher intensity of A1g1 and A1g2 modes. At 300 K, the intensity of the A1g2 mode was significantly decayed in both the BSTS and Bi2Te3 at Ep 2.33 and 1.87 eV due to the anharmonic coupling. However, at similar value of T, spectral profile of A1g1 and Eg2 modes was not affected because of the lower probability of decay rate of these phonons. In resonant condition, well‐resolved Raman forbidden surface modes were observed at T of 50 K. At 300 K, more asymmetric Fano profile of surface phonon was observed due to the anharmonic coupling. The study indicated that at high T, A1g1 mode and anharmonic coupling may become primary cause for scattering with electronic states of the TIs. However, at low T, primarily, both the LO phonons participated in the scattering.

Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

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In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two-Dimensional Crystals

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Raman spectroscopy of a few layers of bismuth telluride nanoplatelets

From Graphene to Bismuth Telluride: Mechanical Exfoliation of Quasi-2D Crystals for Applications in Thermoelectrics and Topological Insulators

Raman Spectroscopy Of Epitaxial Topological Insulator Bi2te3 Thin Films On Gan Substrates

Interlayer Vibrational Modes in Few-Quintuple-Layer Bi2te3 and Bi2se3 Two-Dimensional Crystals: Raman Spectroscopy and First-Principles Studies

Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy.

Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2 − xSbxTe3 − ySey Thin Films

Polarization-resolved Raman resonant excitation of surface and bulk electronic bands and phonons in MBE grown topological insulator thin films

Raman Characterization and Transport Properties of Morphology-Dependent Two-Dimensional Bi2Te3 Nanofilms

Raman Spectroscopy of Bi2Se3-xTex (x= 0 to 3) Topological Insulator Crystals

Single-domain imaging in topological insulator Bi2Te3 thin films

Layer-dependent Raman spectroscopy of ultrathin

Vibrational Properties of Epitaxial Bi4Te3 Films As Studied by Raman Spectroscopy

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

"Graphene-Like" Exfoliation of Atomically-Thin Bismuth Telluride Films

Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3