Abstract:Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications, Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with similar to 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers, STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy.

Topological insulator nanowires and nanoribbons.

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Ultra-low Carrier Concentration and Surface-Dominant Transport in Antimony-Doped Bi 2 Se 3 Topological Insulator Nanoribbons

Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Aharonov-Bohm interference in topological insulator nanoribbons

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Nontrivial Surface State Transport In Bi2se3 Topological Insulator Nanoribbons

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Distinct Quantum States in Topological Insulator Surfaces of Nanowires and Nanoribbons of Bismuth Selenide (Bi2Se3)

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons