Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Ferroelectric Domain-Wall Logic Units

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

Electric Field Control of Multiferroic Domain Wall Motion

Towards fully electrically controlled domain-wall logic

Strain-driven magnetic domain wall dynamics controlled by voltage in multiferroic heterostructures

Current-driven Magnetic Domain-Wall Logic

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Manipulation of magnetic domain wall by ferroelectric switching: Dynamic magnetoelectricity at the nanoscale

Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale

Nanoscale domain wall devices with magnetic tunnel junction read and write

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Ferroelectric Domain Wall Memory and Logic

Conduction control at ferroic domain walls via external stimuli.

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Charged ferroelectric domain walls for deterministic a.c. signal control

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Low-Voltage Domain-Wall LiNbO3 Memristors

Direct visualization of local magnetic domain dynamics in a 2D Van der Walls material/ferromagnet interface