Abstract:Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an electric field in a nanowire consisting of a laterally polarized piezoelectric bar inducing a giant strain in a ferromagnetic spin-valve. We propose to use such novel domain wall gate as an elementary brick to generate a complete set of boolean logic functions or stabilize domain walls in high density memory applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to control the motion of magnetic domain walls by electric fields at room temperature in order to realize spintronic devices with ultra - low power consumption**. Specifically, the authors have studied how to use strain - mediated magnetoelectric coupling in piezoelectric/ferromagnetic nanostructures to control magnetic domain wall logic gates and apply them to high - density magnetic storage and Boolean logic operations. ### Core of the problem 1. **Reducing power consumption**: With the continuous miniaturization of integrated circuits, power consumption has become a key factor limiting their further development. Controlling the magnetic state in magnetostrictive/piezoelectric systems through magnetoelectric coupling can open up new avenues for ultra - low - power electronics. 2. **Achieving effective control at room temperature**: The applications of existing multiferroic materials at room temperature are limited by weak ferromagnetism and low - temperature effects. Therefore, a solution that can work efficiently at room temperature is required. 3. **Integration into practical devices**: Although the magnetoelectric coupling effect has been verified in various multiferroic heterostructures, integrating these complex geometric structures into practical magnetic storage and logic nano - devices remains a challenge. ### Solution The authors propose a new device geometry based on piezoelectric/ferromagnetic nanostructures. By introducing laterally polarized piezoelectric strips in nanowires, a large strain is generated in the ferromagnetic spin valve, thereby achieving electric - field control of the motion of magnetic domain walls. This method can significantly increase the energy barrier of magnetic domain wall motion at room temperature, and thus achieve effective manipulation of magnetic domain walls. ### Application prospects 1. **Boolean logic operations**: Through this magnetic domain wall logic gate, complete Boolean logic functions can be generated, providing new ideas for low - power - consumption computing. 2. **High - density magnetic storage**: This technology can also be used to stabilize magnetic domain walls, thereby increasing the density and stability of magnetic memories, for example, in "racetrack memory". ### Experimental verification The experimental results show that, when a voltage is applied, the propagation field strength of the magnetic domain wall almost doubles, indicating that the strain generated by the piezoelectric effect can effectively control the motion of the magnetic domain wall. In addition, by measuring the capacitance - voltage characteristics of the PZT layer, the existence of this magnetoelectric coupling effect is further confirmed. ### Conclusion This research demonstrates the possibility of controlling the motion of magnetic domain walls by electric fields at room temperature, providing important experimental evidence and technical routes for realizing spintronic devices with ultra - low power consumption.

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