Abstract:The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases, simple to interpret. In other cases, more sophisticated modeling based on the stochastic Liouville equation (SLE) is needed to access valuable information from NZFMR results. It has been shown that hyperfine and dipolar coupling interactions at atomic-scale defects affect the NZFMR line shape, but experimental parameters related to the detection method of NZFMR can also affect the nature of the response. Here, we demonstrate four distinct NZFMR detection methods in Si MOSFETs, which all access identical Si/SiO2 interface defects. In all four cases, we show that the line shape of the response is tunable based on experimental parameters alone. Using SLE-based modeling, we verify that time constants connected to physical carrier capture rates at the defect sites lead to these NZFMR line shape changes. The results demonstrate a method to extract some atomic-scale information for the purpose of defect identification. They also have broader applications to the continued development of ultra-sensitive magnetometers based on NZFMR in semiconductors. Additionally, the NZFMR effect in common Si-based devices may provide an inexpensive and accessible platform that mimics similar radical pair mechanisms that have become increasingly important in various biology fields.

Defect detection in nano-scale transistors based on radio-frequency reflectometry

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

Resonant electron scattering by defects in single-walled carbon nanotubes

Detection of Mechanical Resonance of a Single-Electron Transistor by Direct Current

Suspended single-electron transistor as a detector of its nanomechanical motion

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Modeling a radio-frequency single-electron-transistor scanning probe

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

Evaluating defects in solution-processed carbon nanotube devices via low-temperature transport spectroscopy

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

A Sensitive Charge Scanning Probe Based on Silicon Single Electron Transistor

Gate reflectometry in dense quantum dot arrays

Single-Electron Transport Through Semiconducting Nanowires: A Comparison Between Silicon and Germanium

Fabrication of single electron transistors as the readout circuits for terahertz detectors

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Charge sensitivity enhancement via mechanical oscillation in suspended carbon nanotube devices

Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor