Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells

H. Malissa,W. Jantsch,M. Mühlberger,F. Schäffler,Z. Wilamowski,M. Draxler,P. Bauer
DOI: https://doi.org/10.1063/1.1788881
IF: 4
2004-09-06
Applied Physics Letters
Abstract:We investigate the electron spin resonance of electrons in Si1−xGex quantum wells defined by SiGe barriers (19%–25%Ge). Adding small amounts of Ge changes both g-factor and linewidth and their anisotropy. We explain these effects in terms of the Bychkov–Rashba field that originates from one-sided modulation doping. The main effect arises from the increase in spin–orbit interaction with increasing x. We argue that these effects may be used to tune the g-factor of electrons in quantum dots for a selective spin manipulation.
physics, applied
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