Abstract:Efficient GaN-based green micro light-emitting diodes (micro-LEDs) are critical for novel full-color displays. In this work, triangular-mesa micro-LED arrays with full-A-side (sample A) and full-M-side (sample M) were fabricated using InGaN-based quantum dot green LED epitaxial wafers grown by plasma-assisted molecular beam epitaxy. The two samples were soaked in a tetramethylammonium hydroxide solution to remove the damage caused by dry etching on their sidewalls. The effect of the crystallographic orientations of device sidewalls on the optoelectronic performance of micro-LEDs was investigated. The result indicates that the external quantum efficiency (EQE) of the as-prepared micro-LEDs with both structures has been greatly improved compared with the normal-structured micro-LEDs. The peak EQE of sample A is 43% higher than that of sample M. Most importantly, the peak EQE of sample A is 80% higher than that of conventional quadrilateral devices. The efficiency improvement of sample A is attributed to the increasing light extraction efficiency because zigzagged sidewalls are performed after the sidewall repair process in sample A, while flat sidewalls are in sample B. However, the zigzagged sidewalls simultaneously bring about a larger leakage current because more surface defects are formed on larger equivalent sidewall surface areas. In addition, the two samples exhibit excellent wavelength stability due to the weakened polarization field in quantum dots. Therefore, it is a promising method for improving the luminous efficiency of InGaN QD-based micro-LEDs by adopting a full-A sidewall structure.

P‐156: Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN based Micro‐LEDs by Atomic Layer Deposition

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition

Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition.

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs

Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Increasing Efficiency and Extending Lifetime of Red Micro Light-Emitting Diodes Through Sidewall Treatment for Improved Reliability

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

The impacts of SiO 2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs