Abstract:InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top. Electroluminescence (EL) measurements of fabricated devices with a mesa diameter of 10 μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency (EQE). In contrast, the application of positive biases can decrease the EQE. The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall (SRH) recombination. Two suggested strategies, reducing insulator layer thickness and exploring alternative materials, can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.

What problem does this paper attempt to address?

The problem this paper attempts to address is improving the efficiency of InGaN/GaN micro-light-emitting diodes (micro-LEDs). Specifically, the authors propose a method using a metal-insulator-semiconductor (MIS) structure on the device sidewalls to improve external quantum efficiency (EQE). The paper mentions that as the size of the micro-LED decreases, its EQE significantly drops, mainly due to increased surface recombination caused by sidewall surface defects generated during plasma-assisted dry etching. To suppress this surface recombination and improve EQE, the authors designed an MIS structure and validated its effectiveness through experimental and theoretical analysis. ### Main Issues: 1. **Efficiency Drop Issue**: As the size of the micro-LED decreases, its external quantum efficiency (EQE) significantly drops. 2. **Surface Recombination Issue**: Increased surface recombination due to sidewall surface defects reduces the device's efficiency. ### Solutions: 1. **MIS Structure**: Depositing metal on the device sidewalls as sidewall electrodes to form an MIS structure. 2. **Electric Field Regulation**: Applying a negative bias on the sidewall electrodes can reduce surface recombination, thereby improving EQE; applying a positive bias increases surface recombination, reducing EQE. 3. **Future Improvement Strategies**: Reducing the thickness of the insulating layer and exploring high dielectric constant materials to further improve EQE. ### Experimental Results: - **EQE Changes**: In a 10 μm diameter mesa structure, applying a negative bias can significantly improve EQE, while applying a positive bias reduces EQE. - **I-V Characteristics**: Applying sidewall bias changes the device's I-V characteristics due to the influence of the sidewall electric field on carrier mobility. ### Theoretical Analysis: - **Energy Band Structure**: By analyzing the energy band structure of the MIS structure, it explains how sidewall bias affects surface electron density and surface Shockley-Read-Hall (SRH) recombination. - **Simulation Results**: Simulation results using the commercial simulation tool Apsys further support the theoretical analysis, showing that a high sidewall electric field can significantly suppress surface SRH recombination, thereby improving efficiency. In summary, this paper proposes an effective method to improve the efficiency of InGaN/GaN micro-LEDs by introducing an MIS structure and validates its feasibility through experimental and theoretical analysis.

Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

P‐156: Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN based Micro‐LEDs by Atomic Layer Deposition

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Enhancing optical output power efficiency in nitride‐based green micro light‐emitting diodes by sidewall ion implantation

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs

External quantum efficiency enhancement of GaN-based blue LEDs by treating their full-M-sided hexagonal mesa with TMAH solution

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency