Abstract:Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density. Synopsis : The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition

Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition.

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

P‐156: Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN based Micro‐LEDs by Atomic Layer Deposition

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Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

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Size-Dependent Efficiency And Efficiency Droop Of Blue Ingan Micro-Light Emitting Diodes

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density