Abstract:With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of physical vapor transport (PVT) growth, which is a critical step to obtain high quality SiC crystals with polytype stability and low dislocation density. This paper describes a study on dislocation behavior of large diameter 4H-SiC crystals at the early stages of PVT growth. Synchrotron x-ray topography is applied to 6-inch PVT-grown crystals with a thickness of several hundred microns on 4H-SiC seeds. Grazing-incidence topographs in (g = 11overline{2}8) and (g = 1overline{1}09) recorded from both the seed crystal and newly grown layer show the presence of screw-type basal plane dislocations (BPDs) with (b = 1/3left[ {11overline{2}0} ight]) at the inner region of the wafers, which is further confirmed by comparing with ray tracing simulated images of these dislocations. Their origins are likely from deflection of threading edge dislocations (TEDs) onto the basal plane by the overgrowth of macro-steps. Pairs of threading screw/mixed dislocations (TSDs/TMDs) are found to be newly generated at the initial growth stage and some are deflected onto the basal plane. A high density of newly generated TEDs is observed in the early-grown crystals, which are either nucleated in pairs at the seed/crystal interface or converted from BPDs in the seed crystal. Furthermore, dislocations with unique shapes are observed and found to be associated with deflection of TMDs and TEDs, which become the major source for BPD generation during the early PVT growth stage. Possible models to explain their formation mechanism are developed.

Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes

Dislocation-related leakage-current paths of 4H silicon carbide

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

(Invited) Defects in Cast-Mono Crystalline Silicon

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Effect of edge dislocations on structural and electric properties of 4H-SiC

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Dependence of Leakage Current on Dislocations in GaN-based Light-Emitting Diodes

Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H–SiC IGBT

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties