Abstract:Owing to its narrow indirect bandgap, bulk bismuth telluride (Bi2Te3) exhibits exceptionally low room-temperature photoluminescence (PL). Consequently, it remains challenging to achieve promising optical and optoelectronic performance from Bi2Te3. Moreover, due to the lack of plasmonic materials and available modulation methods, it is challenging to effectively control the surface plasmon resonance intensities in the visible region. Herein, thickness-dependent photoluminescence studies unveil ultrahigh (282-fold) room-temperature photoluminescence (visible) from 20 quintuple layer Bi2Te3 nanosheets (NSs) compared to 200 quintuple layer NSs, attributable to a significant bandgap opening. Intriguingly, considerable photoluminescence quenching is observed beyond the thickness of 20 quintuple layer Bi2Te3. The PL emission is further optimized with reference to the number of quintuple layers, and the mechanism possibly responsible for such PL behavior is elucidated. Moreover, the thickness modulation is put forward as an effective strategy to control visible surface plasmon resonance energy modes and their intensities. Bi2Te3 nanosheets with large area and high crystallinity are fabricated on various silicon substrates by a facile hot-pressing strategy, which facilitates investigation of intrinsic properties of 2D Bi2Te3. It is believed that these findings hold paramount importance in understanding the optical response of Bi2Te3 toward nanoscale variations and help build next-generation transparent and flexible optoelectronic/plasmonic devices.

Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Moire Superlattices At The Topological Insulator Bi2te3

Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Stacking-layer-tuned Topological Phases in M2Bi2Te5 (M = Ge, Sn, Pb) Films

Direct Visualization of a Two-Dimensional Topological Insulator in the Single-Layer1t′−wte2

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Realization of Z$_2$ topological photonic insulators made from multilayer transition metal dichalcogenides

Magneto-optical effects of an artificially-layered ferromagnetic topological insulator with T$_C$ of 160 K

Ultrahigh Room-Temperature Photoluminescence From Few To Single Quintuple Layer Bi2te3 Nanosheets

Exploration of intrinsic magnetic topological insulators in multiple-MnTe-intercalated topological insulator Bi2Te3