Abstract:The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm(2) (V s)(-1) with corresponding sheet carrier densities of 2.3-1.3 x 10(13) cm(-2). On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm(2) (V s)(-1) with corresponding sheet carrier densities of 1.3 and 1.1 x 10(13) cm(-2), respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.

Surface optical phonon scattering in N-polar GaN quantum well channels

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Mobility Limiting Scattering Mechanisms in Nitride-Based Two-Dimensional Heterostructures with the Ingan Channel

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Electron mobility in InxGa1-xN channel HEMTs

Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Anisotropic Charge Transport in Nonpolar GaN Quantum Wells: Polarization Induced Line Charge and Interface Roughness Scattering

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Hot phonon effects on high-field transport in 2DEG GaN

Surface Optical Phonions In Gallium Phosphide Nanowires

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Electron Mobility in A Gaas/Alas Quantum Well with A Thin Alas Middle Barrier

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Influence of Surface Optical Phonons on Exciton Binding Energies of a Quasi-One-dimensional Wurtzite GaN-based Nanowire: Quantum Size Effect