Abstract:<math> β</math>-Gallium oxide (<math> β - G a 2 O 3</math>) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk <math> β - G a 2 O 3</math>. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

Surface optical phonon scattering in N-polar GaN quantum well channels

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Electron mobility in InxGa1-xN channel HEMTs

Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Anisotropic Charge Transport in Nonpolar GaN Quantum Wells: Polarization Induced Line Charge and Interface Roughness Scattering

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Hot phonon effects on high-field transport in 2DEG GaN

Surface Optical Phonions In Gallium Phosphide Nanowires

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Size and dielectric dependence of interface and surface optical phonons spectra in wurtzite GaN/AlN quantum well wires

Influence of Surface Optical Phonons on Exciton Binding Energies of a Quasi-One-dimensional Wurtzite GaN-based Nanowire: Quantum Size Effect

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Optical, magnetic, and transport properties of two-dimensional III-nitride semiconductors (AlN, GaN, and InN) due to acoustic phonons scattering