Abstract:The formation of a two-dimensional electron gas (2DEG) at the GaN (0001)/AlN interface holds significant implications for GaN-based high-voltage and high-frequency (RF) devices. Due to the promising results provided by the addition of a thin layer of AlN in metal–oxide-semiconductor channel high-electron-mobility transistor devices, this interface can be found in both the access region and near the dielectric gate. Recent ab initio simulations shed light on the crucial role played by spontaneous and piezoelectric polarizations within polar GaN and AlN crystals in driving the formation of the 2DEG. This study explores the underlying mechanisms behind the 2DEG formation and investigates the impact of fixed charges and additional layers, like Al2O3, on the carrier concentration. Consistent with the literature, our findings highlight the predominant role of polarizations within III–V materials in the formation of the 2DEG. Moreover, we examine the influence of fixed charges on the AlN surface, revealing their ability to accumulate or deplete the 2DEG, while maintaining charge conservation through the emergence of a new two-dimensional charge gas on the AlN surface. Additionally, we explore the effects of incorporating a β-Al2O3 crystal layer on the GaN/AlN structure, finding that the 2DEG’s carrier density is reduced, yet not entirely eliminated, while a significant positive charge concentration at the AlN/Al2O3 interface pins the Fermi level. This comprehensive investigation contributes to our understanding of microscopic phenomena in III–V heterostructures, paving the way for future advancements and applications in power electronics.

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Anisotropic Charge Transport in Nonpolar GaN Quantum Wells: Polarization Induced Line Charge and Interface Roughness Scattering

Charge transport in non-polar and semi-polar III-V nitride heterostructures

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Anisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells

The In-Plane Anisotropy of the Effective G Factors in Al0.25Ga0.75N/GaN Based Quantum Point Contacts with Narrow Channels

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Anisotropy Of Two-Photon Absorption And Free-Carrier Effect In Nonpolar Gan

Influence of Polarization-Induced Electric Field on Subband Structure in Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N/GaN Double Quantum Wells

Anisotropic structural and optical properties of semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction